Trenched power semiconductor structure with schottky diode and fabrication method thereof

• US 7,994,001 B1
• Filed: 05/11/2010
• Issued: 08/09/2011
• Est. Priority Date: 05/11/2010
• Status: Active Grant

• Current Assignee: Super Group Semiconductor Co., Ltd.
• Original Assignee: Great Power Semiconductor Corp.
• Inventors: Yeh, Chun Ying, Hsu, Hsiu Wen
• Primary Examiner(s): Geyer; Scott B
• Application Number:
  US12/777,481
• Time in Patent Office: 455 Days
• Field of Search: None
• US Class Current: 438/237
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66719 With a step of forming an insulating sidewall spacer
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7806 the other device being a Schottky barrier diode

Abstract

A fabrication method of a trenched power semiconductor structure with a schottky diode is provided. Firstly, a drain region is formed in a substrate. Next, at least two gate structures are formed above the drain region, and then, a body and at least a source region are formed between the two adjacent gate structures. Thereafter, a first dielectric structure is formed on the gate structure to shield the gate structure. Then, a contact window is formed in the body and has side surface thereof adjacent to the source region to expose the source region. Afterward, a second dielectric structure is formed in the contact window. Next, by using the second dielectric structure as an etching mask, the body is etched to form a narrow trench extending to the drain region below the body. Finally, a metal layer is filled into the contact window and the narrow trench.

Claims

1. A fabrication method of a trenched power semiconductor structure with a schottky diode comprising the steps of:

a) providing a drain region;

b) forming at least two gate structures above the drain region, and forming a body and at least a source region between the two neighboring gate structures;

c) forming a first dielectric structure covering the gate structure;

d) by using the first dielectric structure as an etching mask, forming a contact window with a sidewall adjacent to the source region;

e) forming a second dielectric structure in the contact window, and the second dielectric structure defining at least an opening to expose a portion of a bottom of the contact window;

f) etching the body through the second dielectric structure to form a narrow trench extending to the drain region below the body, and a width of the narrow trench being smaller than that of the contact window; and

g) filling the contact window and the narrow trench with a metal layer to form the schottky diode at an interface between the metal layer and the drain region.

2. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, wherein the step of forming the first dielectric structure comprises:

depositing a first dielectric layer; and

forming at least an opening, which is utilized to define the contact window, in the first dielectric layer.

3. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, after the step of forming the contact window, further comprising the step of forming a heavily doped region in the body below the contact window.

4. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, wherein the second dielectric structure comprises a sidewall structure extended from the bottom of the contact window upward to the first dielectric structure.

5. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, wherein the step of forming the second dielectric structure comprises:

depositing a second dielectric layer on the first dielectric structure and the contact window; and

removing a portion of the second dielectric layer on an upper surface of the first dielectric structure and a portion of the second dielectric layer on the bottom of the contact window to form the second dielectric structure covering at least the sidewall of the contact window.

6. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, wherein the step of forming the gate structure and the first dielectric structure comprising:

forming a pattern layer on a substrate with the drain region therein;

etching the substrate through the pattern layer to form a plurality of trenches;

forming a gate dielectric layer on an inner surface of the trenches;

forming the gate structures by filling polysilicon material in the trenches and opens of the pattern layer;

removing the pattern layer; and

forming the first dielectric structure lining at least an exposed sidewall of the gate structure protruded from the substrate.

7. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 6, wherein after the step of forming the first dielectric structure, an upper surface of the gate structure is exposed.

8. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 7, wherein the gate structure is etched through the upper surface thereof to form a concave encircled by the first dielectric structure in the step of forming the contact window.

9. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 8, wherein the step of forming the second dielectric structure comprises:

depositing a second dielectric layer on the first dielectric structure and the contact window, the second dielectric layer substantially filling the concave above the gate structure; and

removing a portion of the second dielectric layer on the bottom of the contact window by etching to form the second dielectric structure at least covering the sidewall of the contact window and the upper surface of the gate structure.

10. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 9, after the step of forming the narrow trench further comprising the step of removing a portion of the second dielectric structure covering the sidewall of the contact window to expose the source region, and leaving a portion of the second dielectric structure covering the gate structure.

11. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 9, wherein a depth of the concave above the gate structure is much greater than a thickness of the second dielectric layer.

12. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 6, wherein the step of forming the first dielectric structure comprises:

depositing a first dielectric layer to cover the gate structure;

etching the first dielectric layer to from the first dielectric structure lining at least the exposed sidewall of the gate structure protruded from the substrate.

13. The fabrication method of a trenched power semiconductor structure with a schottky diode of claim 1, wherein a width of the contact window is greater than that of the gate structure.

14. A trenched power semiconductor structure with a schottky diode comprising:

a drain region;

at least two gate structures, located above the drain region;

a body, located above the drain region and between the neighboring gate structures;

at least a source region, located in the body and adjacent to the gate structure;

a dielectric structure, located on the body and covering the gate structures;

a contact window, extended from an upper portion of the body upward to the dielectric structure and adjacent to the source region;

a narrow trench, extended from a bottom of the contact window to the drain region, and having a width smaller than that of the contact window; and

a metal layer, filled into the contact window and the narrow trench to electrically connect the source region and the drain region.

15. The trenched power semiconductor structure with a schottky diode of claim 14, further comprising a heavily doped region, located in the body below the contact window, and the narrow trench penetrating the heavily doped region.

16. The trenched power semiconductor structure with a schottky diode of claim 14, wherein the gate structure is protruded from an upper surface of the body.

17. The trenched power semiconductor structure with a schottky diode of claim 16, wherein the dielectric structure has a first portion and a second portion, the first portion is extended from the upper surface of the body upward to cover a sidewall of the gate structure, and the second portion covers an upper surface of the gate structure.

18. The trenched power semiconductor structure with a schottky diode of claim 14, wherein a width of the contact window is greater than that of the gate structure.