Method of making deep junction for electrical crosstalk reduction of an image sensor
First Claim
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1. A method of fabricating a semiconductor device, comprising:
- providing a semiconductor substrate having a front surface and a back surface;
forming a masking layer on the back surface of the semiconductor substrate;
forming an opening in the masking layer, the opening configured to expose the semiconductor substrate within the opening;
forming an aluminum-containing layer on the masking layer and on the semiconductor substrate within the opening; and
driving aluminum from the aluminum-containing layer into the semiconductor substrate through the opening of the masking layer to form a junction of aluminum dopants around a sensor element that extends from the back surface without extending to the front surface.
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Abstract
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
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20 Claims
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1. A method of fabricating a semiconductor device, comprising:
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providing a semiconductor substrate having a front surface and a back surface; forming a masking layer on the back surface of the semiconductor substrate; forming an opening in the masking layer, the opening configured to expose the semiconductor substrate within the opening; forming an aluminum-containing layer on the masking layer and on the semiconductor substrate within the opening; and driving aluminum from the aluminum-containing layer into the semiconductor substrate through the opening of the masking layer to form a junction of aluminum dopants around a sensor element that extends from the back surface without extending to the front surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a semiconductor device, comprising:
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providing a semiconductor substrate having a front surface and a back surface; forming a plurality of sensor elements on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and forming an aluminum doped feature in the substrate extending from the back surface but not extending to the front surface, the aluminum doped feature disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements. - View Dependent Claims (10, 11, 12, 13)
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14. A method of fabricating an image sensor semiconductor device, comprising:
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providing a semiconductor substrate having a front surface and a back surface; forming a sensor element in the semiconductor substrate; forming an inter-level dielectric (ILD) on the front surface of the semiconductor substrate; and forming a junction of aluminum dopants in the semiconductor substrate and extending from the back surface without extending to the front surface. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification