Semiconductor element and display device using the same
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film over the gate electrode;
a channel region over the gate electrode with the gate insulating film therebetween;
a source region and a drain region with the channel region therebetween;
an electrode on one of the source region and the drain region;
an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode;
an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and
a pixel electrode over the organic resin film,wherein the organic resin film has a convex inner wall surface in the second opening, andwherein the pixel electrode contacts the electrode through the first opening and the second opening.
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Abstract
Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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Citations
48 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a channel region over the gate electrode with the gate insulating film therebetween; a source region and a drain region with the channel region therebetween; an electrode on one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and a pixel electrode over the organic resin film, wherein the organic resin film has a convex inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a channel region over the gate electrode with the gate insulating film therebetween; a source region and a drain region with the channel region therebetween; an electrode on one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening in such a manner that an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening and the edge of the second opening is located outside the edge of the first opening; a pixel electrode over the organic resin film, wherein the organic resin film has a convex inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a channel region over the gate electrode with the gate insulating film therebetween; a source region and a drain region with the channel region therebetween; an electrode electrically connected to one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening in such a manner that an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening and the edge of the second opening is located outside the edge of the first opening; a pixel electrode over the organic resin film, wherein the organic resin film has a convex inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a gate electrode; a gate insulating film over the gate electrode; a channel region over the gate electrode with the gate insulating film therebetween; a source region and a drain region with the channel region therebetween; an electrode on one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening; and a pixel electrode over the organic resin film, wherein a portion of a top surface of the inorganic insulating film is inside the second opening so that the portion of the top surface of the inorganic insulating film is not covered with the organic resin film at a bottom of the second opening, wherein the organic resin film has a convex inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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33. A semiconductor device comprising:
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a bottom gate type thin film transistor including at least a channel region, a source region and a drain region; an electrode on one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening so as to expose a portion of a top surface of the inorganic insulating film around the first opening; and a pixel electrode over the organic resin film, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40)
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41. A semiconductor device comprising:
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a bottom gate type thin film transistor including at least a channel region, a source region and a drain region; an electrode on one of the source region and the drain region; an inorganic insulating film comprising silicon nitride over the electrode, the inorganic insulating film including a first opening to expose a portion of the electrode; an organic resin film over the inorganic insulating film, the organic resin film including a second opening wherein the second opening is overlapped with the first opening in such a manner that an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening and the edge of the second opening is located outside the edge of the first opening; and a pixel electrode over the organic resin film, wherein the organic resin film has a curved inner wall surface in the second opening, and wherein the pixel electrode contacts the electrode through the first opening and the second opening. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48)
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Specification