Thin film transistors using thin film semiconductor materials
First Claim
1. A thin film transistor, comprising:
- a semiconductor layer in the transistor comprising an oxynitride compound comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, tin, cadmium, gallium, and combinations thereof.
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Abstract
The present invention generally comprises TFTs having semiconductor material comprising oxygen, nitrogen, and one or more element selected from the group consisting of zinc, tin, gallium, cadmium, and indium as the active channel. The semiconductor material may be used in bottom gate TFTs, top gate TFTs, and other types of TFTs. The TFTs may be patterned by etching to create both the channel and the metal electrodes. Then, the source-drain electrodes may be defined by dry etching using the semiconductor material as an etch stop layer. The active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values. The tuning may be accomplished by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.
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Citations
16 Claims
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1. A thin film transistor, comprising:
a semiconductor layer in the transistor comprising an oxynitride compound comprising oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, indium, tin, cadmium, gallium, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A thin film transistor, comprising:
- a semiconductor layer comprising an oxynitride compound that comprises zinc, oxygen and nitrogen, the semiconductor layer additionally comprising a metal nitride, a metal oxide or combinations thereof.
- View Dependent Claims (14, 15)
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16. A thin film transistor, comprising:
- a semiconductor layer comprising an oxynitride compound that comprises oxygen, nitrogen, indium, gallium and zinc, the semiconductor layer additionally comprising a metal nitride, a metal oxide or combinations thereof.
Specification