Light emitting devices
First Claim
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1. A light emitting diode comprising:
- a first semiconductor layer doped with a first dopant, coupled to a first electrode layer;
an active layer overlying said first semiconductor layer, capable of emitting light;
a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type;
a second electrode layer on said second semiconductor layer; and
a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein;
the nearest neighbor distance between holes is approximately equal to the wavelength of emitted light;
a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is 40 nm;
a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed;
when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and
at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen.
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Abstract
Light-emitting devices, and related components, systems and methods are disclosed.
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Citations
12 Claims
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1. A light emitting diode comprising:
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a first semiconductor layer doped with a first dopant, coupled to a first electrode layer; an active layer overlying said first semiconductor layer, capable of emitting light; a second semiconductor layer doped with a second dopant overlying said active layer, said first and second dopants being of opposite type; a second electrode layer on said second semiconductor layer; and a periodically-arranged plurality of holes formed in the second semiconductor layer and extending towards the first semiconductor layer, wherein; the nearest neighbor distance between holes is approximately equal to the wavelength of emitted light; a depth of at least one of the plurality of holes is such that the thickness of said second semiconductor layer at a bottom of said at least one of the plurality of holes is 40 nm; a portion of the second electrode layer is disposed in a region of the second semiconductor layer in which a portion of the plurality of holes are formed; when forward biased, light is emitted from at least a portion of the active layer disposed beneath a portion of the second electrode; and at least one of said first semiconductor layer, said active layer, and said second semiconductor layer composes a group III element and nitrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification