×

Nitride-based semiconductor light emitting diode

  • US 7,994,525 B2
  • Filed: 12/14/2010
  • Issued: 08/09/2011
  • Est. Priority Date: 10/07/2005
  • Status: Active Grant
First Claim
Patent Images

1. A nitride-based semiconductor LED comprising:

  • a substrate that is formed in a rectangle shape and of which a ratio of the width and the length is equal to or more than 1.5;

    an n-type nitride semiconductor layer that is formed on the substrate and is composed of an n-type semiconductor material having a compositional formula of InXAlYGa1-X--YN(0≦

    X, 0≦

    Y, and X+Y≦

    1);

    an active layer and a p-type nitride semiconductor layer that are sequentially formed on a predetermined region of the n-type nitride semiconductor layer, the active layer being composed of a semiconductor material having a compositional formula of InXAlyGa1-X-YN(0≦

    X, 0≦

    Y, and X+Y≦

    1)and the p-type nitride semiconductor layer being composed of a p-type semiconductor material having a compositional formula of InXAlYGa1-X-YN(0≦

    X, 0≦

    Y, and X+Y≦

    1);

    a transparent electrode that is formed on the p-type nitride semiconductor layer;

    a p-electrode pad that is formed on the transparent electrode;

    an n-electrode pad that is formed on the n-type nitride semiconductor layer; and

    a buffer layer that is formed between the substrate and the n-type nitride semiconductor layer,wherein the p-electrode pad, devoid of any elongated protrusion or any auxiliary electrode, is spaced at a distance of 50 to 200 μ

    m an outer edge line of the p-type nitride semiconductor layer such that a uniform luminous effect is obtained in the entire LED, and wherein the center of the outer edge line of the p-type nitride semiconductor layer intersects with a straight line that connects a center of the p-electrode pad and a center of the n-electrode pad, and,wherein the n-type semiconductor layer substantially surrounds the n-electrode.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×