System and method to read data subject to a disturb condition
First Claim
Patent Images
1. A method of determining a data value stored at a particular cell of a memory, the method comprising:
- measuring characteristics of a plurality of cells at the memory, the characteristics corresponding to a plurality of values including a first value stored at the particular cell and a second value stored at a second cell of the memory;
testing whether at least some of the plurality of values match a particular pattern correlated to a disturb condition at the particular cell; and
providing a data value corresponding to the particular cell, wherein the data value is determined at least in part based on a result of the testing.
3 Assignments
0 Petitions
Accused Products
Abstract
Systems and methods for reading data are disclosed. In a particular embodiment, a method includes measuring characteristics of a plurality of cells at a memory. The characteristics correspond to a plurality of values including a first value stored at a particular cell and a second value stored at a second cell of the memory. The method includes testing whether at least some of the plurality of values match a particular pattern correlated to a disturb condition at the particular cell, and providing a data value corresponding to the particular cell. The data value is determined at least in part based on a result of the testing.
25 Citations
50 Claims
-
1. A method of determining a data value stored at a particular cell of a memory, the method comprising:
-
measuring characteristics of a plurality of cells at the memory, the characteristics corresponding to a plurality of values including a first value stored at the particular cell and a second value stored at a second cell of the memory; testing whether at least some of the plurality of values match a particular pattern correlated to a disturb condition at the particular cell; and providing a data value corresponding to the particular cell, wherein the data value is determined at least in part based on a result of the testing. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of reading data, comprising:
-
reading a first cell to obtain a first measurement of a first value of a physical property of the first cell of a memory, the first value corresponding to first data stored at the first cell; reading a second cell to obtain a second measurement of a second value of a physical property of the second cell of the memory, the second value corresponding to second data stored at the second cell; and generating an estimation of particular data stored at a particular cell based at least partially on the first measurement and the second measurement, wherein generating the estimation includes classifying a combination of at least the first measurement and the second measurement into a particular class of a group of at least two classes, wherein at least one class of the group of at least two classes is a class of combination measurement values that are determined to correlate to the particular cell being prone to a disturb error. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
-
-
26. In a flash device that includes an array of memory cells and a circuit to read states of multiple memory cells and to compare the read states to at least two reference voltage levels defining at least three memory state ranges, a method comprising:
-
reading memory states of a plurality of cells adjacent to an addressed set of cells, wherein a memory state of each cell of the addressed set of cells is associated with at least one corresponding cell of the plurality of cells; and for each particular cell of the addressed set of cells; classifying joint states of cells associated with the particular cell into a particular class of a group of at least two classes based on matching the joint states to a particular pattern of values that is determined to correspond to one of the at least two classes; and providing a data value of the particular cell in accordance with the particular class. - View Dependent Claims (27, 28)
-
-
29. In a flash device that includes an array of memory cells and a circuit to read states of multiple memory cells in the array of memory cells and to compare the read states to at least two reference voltage levels defining at least three memory state ranges, a method comprising:
-
reading memory states of a plurality of cells adjacent to an addressed set of cells, wherein a memory state of each cell of the addressed set of cells is associated with at least one cell of the plurality of cells; and for each particular cell of the addressed set of cells; classifying joint states of cells associated with the particular cell into a particular class of a group of at least two classes, wherein a first class of the group of at least two classes indicates a determined correlation indicating that the particular cell is prone to a disturb condition; and adjusting a reliability measure of data stored in the particular cell in accordance with the particular class. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36)
-
-
37. A memory device comprising:
-
an array of memory cells; a read circuit coupled to the array of memory cells, wherein the read circuit is configured to read a state of an addressed memory cell and to compare the state to at least one reference voltage level associated with at least two memory state ranges; and a controller coupled to the read circuit, wherein the controller is configured to initiate a read operation to read a first value stored at a first memory cell and to read a second value stored at a second memory cell, wherein the controller is further configured to compare at least the first value and the second value to a predetermined pattern, wherein the predetermined pattern corresponds to a potential probability of a disturb error with respect to a value stored at the addressed memory cell. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44)
-
-
45. A data storage device comprising:
-
a memory including a plurality of memory elements; a read circuit coupled to the memory, wherein the read circuit is configured to read a state of an addressed memory element of the plurality of memory elements and to compare the state to at least one reference voltage level associated with at least two memory state ranges; and a controller coupled to the read circuit, wherein the controller is configured to initiate a read operation to read a first value stored at a first memory element of the plurality of memory elements and to read a second value stored at a second memory element of the plurality of memory elements, wherein the controller is further configured to compare at least the first value and the second value to a pattern, wherein the pattern corresponds to a probability of a disturb error with respect to a value stored at the addressed memory element. - View Dependent Claims (46, 47, 48, 49, 50)
-
Specification