Data storage using modified voltages
First Claim
1. A method for data storage, comprising:
- storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell;
applying to the target memory cell a first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells in the group with respective first pass voltages;
applying to the target memory cell a second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is different from a respective first pass voltage applied to the one of the other memory cells;
making an assessment of whether the second output storage value has been distorted due to the at least one of the second pass voltages; and
reconstructing the data responsively to the assessment and to the first and second output storage values.
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Accused Products
Abstract
A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell. A first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells with respective first pass voltages, is applied to the target memory cell. A second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells with respective second pass voltages, is applied to the target memory cell. At least one of the second pass voltages is different from a respective first pass voltage. The data is reconstructed responsively to the first and second output storage values.
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Citations
20 Claims
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1. A method for data storage, comprising:
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storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell; applying to the target memory cell a first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells in the group with respective first pass voltages; applying to the target memory cell a second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is different from a respective first pass voltage applied to the one of the other memory cells; making an assessment of whether the second output storage value has been distorted due to the at least one of the second pass voltages; and reconstructing the data responsively to the assessment and to the first and second output storage values. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. Apparatus for data storage, comprising:
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an interface, which is operative to communicate with a memory comprising a group of analog memory cells that are connected in series with one another; and circuitry, which is configured to store data in a target analog memory cell in the group by writing an input storage value into the target memory cell, to apply to the target memory cell a first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells in the group with respective first pass voltages, to apply to the target memory cell a second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells in the group with respective second pass voltages, wherein at least one of the second pass voltages applied to one of the other memory cells in the group is different from a respective first pass voltage applied to the one of the other memory cells, to make an assessment of whether the second output storage value has been distorted due to the at least one of the second pass voltages, and to reconstruct the data responsively to the assessment and to the first and second output storage values. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification