Electron beam enhanced surface wave plasma source

• US 7,998,307 B2
• Filed: 09/12/2006
• Issued: 08/16/2011
• Est. Priority Date: 09/12/2006
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Chen, Lee, Moroz, Paul
• Primary Examiner(s): Hassanzadeh; Parviz
• Assistant Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US11/518,884
• Publication Number:
  US 20080060759A1
• Time in Patent Office: 1,799 Days
• Field of Search: 118/723.MW, 156/345.41, 204/157.43, 204/298.38
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/3233 using charged particles

Abstract

A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

Claims

1. A plasma processing system which etches a substrate, comprising:

a microwave power coupling system including a microwave source which produces microwave energy at 2.45 GHz and a coaxial feed;

a plasma processing chamber which facilitates the formation of plasma from process gas introduced therein;

a substrate holder coupled to said plasma processing chamber and which supports said substrate;

an electromagnetic (EM) wave launcher coupled to said microwave power coupling system and said plasma processing chamber, the EM wave launcher couples EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of said EM wave launcher adjacent said plasma, said EM launcher including

a slot antenna with a first end coupled to an inner conductor of said coaxial feed and a second end coupled to an outer conductor of said coaxial feed, said slot antenna includes one or more slots which couples said EM energy from a first region above said slot antenna between said inner conductor and said outer conductor to a second region below said slot antenna,

a slow wave plate positioned in said first region and which reduces the effective wavelength of said EM energy relative to the wavelength in free space, and

a resonator plate positioned in said second region below said slot antenna, a lower surface of said resonator plate including said plasma surface of the EM wave launcher and an upper surface of said resonator plate abutting a lower surface of said slot antenna;

an electrically conductive layer deposited on said lower surface of said resonator plate of said EM wave launcher so as to protect said lower surface of said resonator plate, wherein said electrically conductive layer comprises a plurality of openings to permit the passage of EM energy at discrete regions of said EM wave launcher; and

a direct current (DC) power source connected to said electrically conductive layer deposited on said lower surface of said resonator plate and which connects a DC voltage to said electrically conductive layer deposited on said lower surface of said resonator plate in order to form a ballistic electron beam that strikes a surface of said substrate.

2. The plasma processing system of claim 1, wherein said power coupling system comprises a microwave power coupling system comprising:

a waveguide coupled to an outlet of said microwave source;

an isolator coupled to said waveguide and which prevents propagation of microwave energy back to said microwave source; and

a coaxial converter coupled to said isolator and which couples said microwave energy to said coaxial feed.

3. The plasma processing system of claim 1, wherein said DC power source couples DC power ranging in voltage from approximately −

2000 V to approximately 1000 V.

4. The plasma processing system of claim 3, wherein said DC power source couples DC power having a negative polarity and the absolute value of the DC voltage is greater than or equal to approximately 500 V.

5. The plasma processing system of claim 1, wherein said electrically conductive layer is deposited on the lower surface of said resonator plate and a protective layer of material is deposited or fused over said deposited electrically conductive layer.

6. The plasma processing system of claim 1, wherein said electrically conductive layer is embedded within the surface layer of said lower surface of said resonator plate.

7. The plasma processing system of claim 1, wherein said resonator plate comprises a high dielectric constant (high-k) material, said high dielectric constant material having a dielectric constant greater than a value of 4.

8. The plasma processing system of claim 1, wherein said electrically conductive layer includes a metal.

9. The plasma processing system of claim 1, wherein said electrically conductive layer includes hafnium, zirconium, titanium, or doped silicon, or a combination of two or more thereof.

10. The plasma processing system of claim 1, wherein said plurality of openings in said electrically conductive layer are uniformly distributed.

11. The plasma processing system of claim 1, wherein said plurality of openings in said electrically conductive layer are non-uniformly distributed.

12. The plasma processing system of claim 1, further comprising:

a grid coupled to said plasma processing chamber and which separates said plasma processing chamber into a first chamber portion which receives a first gas for providing a plasma space and a second chamber portion which receives a second gas for providing a process space having process chemistry to treat said substrate,

wherein said grid is located between said plasma space and said process space, and which permits the diffusion of said plasma between said plasma space and said process space in order to form said process chemistry from said process gas.

13. The plasma processing system of claim 12, wherein said grid comprises one or more passageways for coupling said plasma space to said process space.

14. The plasma processing system of claim 13, wherein said one or more passageways form a rectangular pattern.

15. The plasma processing system of claim 13, wherein said one or more passageways form a circular pattern.

16. The plasma processing system of claim 12, wherein said grid is coupled to a temperature control system which controls the temperature of the grid and said temperature control system comprises one or more fluid channels in said grid which flows a heat transfer fluid.

17. The plasma processing system of claim 16, wherein said one or more fluid channels comprises a plurality of fluid channels which provides spatial temperature control of said grid in order to control uniformity of said process performed in said processing system.

18. The plasma processing system of claim 12, wherein said grid comprises a gas injection grid which injects at least one of said first gas or said second gas and said gas injection grid includes a first gas channel array which provides multiple zones for injecting said first gas into said plasma space to control uniformity of said process performed in said processing system.

19. The plasma processing system of claim 18, wherein said gas injection grid includes a first gas channel array which provides multiple zones for injecting said first gas to control uniformity of said process performed in said processing system.