Controlled electrochemical polishing method

• US 7,998,335 B2
• Filed: 06/13/2005
• Issued: 08/16/2011
• Est. Priority Date: 06/13/2005
• Status: Expired due to Fees

• Current Assignee: Cabot Microelectronics Corporation (Entegris Incorporated)
• Original Assignee: Cabot Microelectronics Corporation (Entegris Incorporated)
• Inventors: Feeney, Paul M., Brusic, Vlasta
• Primary Examiner(s): Neckel; Alexa D.
• Assistant Examiner(s): Smith; Nicholas A.
• Application Number:
  US11/150,944
• Publication Number:
  US 20060281196A1
• Time in Patent Office: 2,255 Days
• Field of Search: 205/640, 205/674
• US Class Current: 205/674
• CPC Class Codes: B23H 5/08 Electrolytic grinding
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: C25D 5/48 After-treatment of electroplated surfaces
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: C25F 3/02 Etching
• CPC Class Codes: H01L 21/32125 by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP

Abstract

The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.

Claims

1. A method of polishing a substrate consisting of:

providing a substrate comprising at least one metal layer,

(ii) contacting the substrate with a polishing composition comprising a liquid carrier and an electrolyte,

(iii) applying an electrochemical potential between the substrate and an electrode in contact with the polishing composition, wherein either (a) the applied potential to the substrate is positive and the polishing composition further comprises a reducing agent for the metal or (b) the applied potential to the substrate is negative and the polishing composition further comprises an oxidizing agent for the metal, wherein the positive potential applied to the substrate is about 50 mV to about 800 mV greater than the open circuit potential of the metal layer of the substrate, and the negative potential applied to the substrate is about 100 mV to about 300 mV less than the open circuit potential of the metal layer of the substrate; and

(iv) removing at least a portion of the metal layer from a surface of the substrate.

2. The method of claim 1, wherein the electrolyte is selected from the group consisting of sulfates, nitrates, phosphates, and combinations thereof.

3. The method of claim 1, wherein the applied potential is positive and the reducing agent is selected from the group consisting of formaldehyde, hypophosphorous acid, phosphorous acid, sulfurous acid, ascorbic acids, borane, borohydrides, dialkylamine boranes, hydrogen, salts thereof, and combinations thereof.

4. The method of claim 1, wherein the applied potential is negative and the oxidizing agent is selected from the group consisting of peroxides, persulfates, cerium salts, iron salts, and combinations thereof.

5. The method of claim 1, wherein the polishing composition further comprises an abrasive.

6. The method of claim 1, wherein the polishing composition further comprises a complexing agent.

7. The method of claim 6, wherein the complexing agent is an organic acid selected from the group consisting of monocarboxylic acids, dicarboxylic acids, polycarboxylic acids, amino acids, and combinations thereof.

8. The method of claim 6, wherein the complexing agent is selected from the group consisting of acetic acid, citric acid, lactic acid, malic acid, malonic acid, oxalic acid, polyacrylic acid, tartaric acid, alanine, glycine, and combinations thereof.

9. The method of claim 6, wherein the complexing agent is a polymeric complexing agent.

10. The method of claim 1, wherein the polishing composition has a pH of about 6 or less.

11. The method of claim 1, wherein the polishing composition further comprises a corrosion inhibitor.

12. The method of claim 1, wherein the polishing composition further comprises a surfactant.

13. The method of claim 1, wherein the substrate comprises a copper layer and optionally a tantalum layer.

14. The method of claim 1, wherein the substrate comprises a gold layer.

15. A method of polishing a substrate comprising:

providing a substrate comprising at least one metal layer, wherein the substrate comprises a front surface and an opposing back surface,

(ii) contacting the substrate with a polishing composition comprising a liquid carrier and an electrolyte,

(iii) applying a positive electrochemical potential between the front surface of the substrate and a first electrode in contact with the polishing composition and applying a negative electrochemical potential between the back surface of the substrate and a second electrode in contact with the polishing composition, and

(iv) removing at least a portion of the metal layer from the surface of the substrate.

16. The method of claim 15, wherein the electrolyte is selected from the group consisting of sulfates, nitrates, phosphates, and combinations thereof.

17. The method of claim 15, wherein the polishing composition further comprises an abrasive.

18. The method of claim 15, wherein the polishing composition further comprises a complexing agent.

19. The method of claim 18, wherein the complexing agent is an organic acid selected from the group consisting of monocarboxylic acids, dicarboxylic acids, polycarboxylic acids, amino acids, and combinations thereof.

20. The method of claim 18, wherein the complexing agent is selected from the group consisting of acetic acid, citric acid, lactic acid, malic acid, malonic acid, oxalic acid, polyacrylic acid, tartaric acid, alanine, glycine, and combinations thereof.

21. The method of claim 18, wherein the complexing agent is a polymeric complexing agent.

22. The method of claim 15, wherein the polishing composition has a pH of about 6 or less.

23. The method of claim 15, wherein the polishing composition further comprises a corrosion inhibitor.

24. The method of claim 15, wherein the polishing composition further comprises a surfactant.

25. The method of claim 15, wherein the polishing composition further comprises an oxidizing agent for the metal.

26. The method of claim 15, wherein the polishing composition further comprises a reducing agent for the metal.

27. The method of claim 15, wherein the substrate comprises a copper layer and optionally a tantalum layer.

28. The method of claim 15, wherein the substrate comprises a gold layer.