Mask pattern data creation method and mask

• US 7,998,642 B2
• Filed: 06/04/2009
• Issued: 08/16/2011
• Est. Priority Date: 06/06/2008
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kodama, Chikaaki, Masukawa, Kazuyuki, Ichikawa, Hirotaka, Kotani, Toshiya
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): ALAM, RASHID A
• Application Number:
  US12/478,479
• Publication Number:
  US 20100021825A1
• Time in Patent Office: 803 Days
• Field of Search: 430/5, 430/394
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A mask pattern data creation method includes: determining whether or not a spacing of adjacent assist pattern feature data is not more than a prescribed spacing, based on: initial position data indicating an initially set position of the assist pattern feature data determined based on an illumination condition; and initial size data indicating an initially set size of the assist pattern feature data satisfying a size condition to not optically form an image on the transfer destination; and moving at least one of the adjacent assist pattern feature data or reducing a size of the at least one to increase the spacing of the assist pattern feature data to exceed a prescribed spacing in the case where it is determined that the spacing of the assist pattern feature data is not more than the prescribed spacing.

Claims

1. A mask pattern data creation method for creating assist pattern feature data of a plurality of assist pattern features to be formed on a mask along with a plurality of main pattern features transferrable to a transfer destination by an exposure, the assist pattern features being not transferrable to the transfer destination, the method comprising:

classifying the main pattern features into at least two groups in accordance with a minimum pitch between adjacent main pattern features;

determining, for a group having a smallest minimum pitch, whether a spacing between adjacent assist pattern features corresponding to main pattern features in the group is not more than a prescribed spacing, the determination being performed based on;

initial positions of the adjacent assist pattern features determined based on an illumination condition; and

initial sizes of the adjacent assist pattern features satisfying a size condition such that the adjacent assist pattern features are not transferrable to the transfer destination; and

adjusting, when it is determined that the spacing between the adjacent assist pattern features is not more than the prescribed spacing, at least one of the adjacent assist pattern features by at least one of changing its position or reducing its size, so as to increase the spacing between the adjacent assist pattern features to exceed the prescribed spacing.

2. The method according to claim 1, wherein, in the case where the assist pattern features disposed at the initial positions overlay each other, the at least one of the assist pattern features is moved from its initial position toward a center of the corresponding main pattern feature to prevent the assist pattern features from overlaying each other, and subsequently, the size of the moved assist pattern feature is increased.

3. The method according to claim 1, wherein the position of the at least one of the assist pattern features is modified according to a pitch between adjacent main pattern features.

4. The method according to claim 1, wherein the size of the at least one of the assist pattern features is modified according to a pitch between adjacent main pattern features.

5. The method according to claim 1, wherein the illumination condition is an off-axis illumination condition.

6. The method according to claim 5, wherein the off-axis illumination condition includes a wavelength λ

of illumination light, a numerical aperture NA of a projection lens through which the illumination light passes, and an inside radius and an outside radius of a light emitting region in a coordinate system in which a radius of a pupil of the projection lens is standardized at unity.

7. The method according to claim 1, wherein the assist pattern features are disposed upward, downward, leftward, and rightward from the main pattern feature to dispose centers of the assist pattern features on two orthogonal straight lines.

8. The method according to claim 1, wherein the assist pattern features are disposed at four corners of the main pattern feature.

9. The method according to claim 1, wherein the assist pattern features are disposed in regions between four corners of the main pattern feature and two orthogonal straight lines not passing through the four corners.

11. The method according to claim 2, wherein

a group composed of a plurality of the assist pattern features is disposed for the one main pattern feature and

a position and a size of all the assist pattern features falling under the same group are set to a position and a size established according to a spacing between a target main pattern feature to which assist pattern features falling under the group are disposed and another main pattern feature most proximal to the target main pattern feature.

12. The method according to claim 2, wherein

a group composed of a plurality of the assist pattern features is disposed for the one main pattern feature and

a position and a size of each individual assist pattern feature are set for each individual assist pattern feature according to a spacing of the main pattern features, independently of a position and a size of another assist pattern feature falling under the same group.

10. A mask pattern data creation method for creating assist pattern feature data of a plurality of assist pattern features to be formed on a mask along with a plurality of main pattern features transferrable to a transfer destination by an exposure, the assist pattern features being not transferrable to the transfer destination, the method comprising:

classifying the main pattern features into at least two groups in accordance with a minimum pitch between adjacent main pattern features;

setting assist pattern feature arrangement regions for at least one of the adjacent main pattern features, according to the minimum pitch between the adjacent main pattern features; and

setting positions and sizes of the assist pattern features associated with the assist pattern feature arrangement regions so that a spacing between adjacent assist pattern features is more than a prescribed spacing.

13. The method according to claim 10, wherein the assist pattern features are disposed upward, downward, leftward, and rightward from the main pattern feature to dispose centers of the assist pattern features on two orthogonal straight lines.

14. The method according to claim 10, wherein the assist pattern features are disposed at four corners of the main pattern feature.

15. The method according to claim 10, wherein the assist pattern features are disposed in regions between four corners of the main pattern feature and two orthogonal straight lines not passing through the four corners.