Semiconductor element and display device using the same
First Claim
1. A semiconductor device comprising:
- a semiconductor having an active layer;
a gate insulating film in contact with the semiconductor;
a gate electrode opposite to the active layer through the gate insulating film;
a first insulating film formed over the active layer;
a second insulating film formed over the first insulating film;
a third insulating film formed over the second insulating film;
a wiring provided over the third insulating film;
a pixel electrode over and electrically connected to the wiring; and
a counter electrode opposed to the pixel electrode,wherein a first opening portion is provided in the second insulating film, an inner wall surface of the first opening portion is covered with the third insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first insulating film, and the third insulating film inside the first opening portion, the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion.
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Accused Products
Abstract
Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
297 Citations
33 Claims
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1. A semiconductor device comprising:
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a semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first insulating film formed over the active layer; a second insulating film formed over the first insulating film; a third insulating film formed over the second insulating film; a wiring provided over the third insulating film; a pixel electrode over and electrically connected to the wiring; and a counter electrode opposed to the pixel electrode, wherein a first opening portion is provided in the second insulating film, an inner wall surface of the first opening portion is covered with the third insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first insulating film, and the third insulating film inside the first opening portion, the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first insulating film formed over the active layer; a second insulating film formed over the first insulating film; a third insulating film formed over the second insulating film; a wiring provided on the third insulating film; and a pixel electrode over and electrically connected to the wiring, wherein a first opening portion is provided in the second insulating film, an inner wall surface of the first opening portion is covered with the third insulating film, the first insulating film and the third insulating film are in contact with each other in a region of 0.3 μ
m to 3 μ
m in a bottom of the first opening portion, a second opening portion is provided in a laminate film including the gate insulating film, the first insulating film, and the third insulating film inside the first opening portion, the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element, a pixel electrode, a counter electrode and a storage capacitor connected with the semiconductor element are provided on a substrate,
wherein the semiconductor element includes: -
a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first insulating film formed over the active layer; a second insulating film formed on the first insulating film; a third insulating film formed on the second insulating film; and a wiring provided on the third insulating film, wherein the pixel electrode over and electrically connected to the wiring, wherein the counter electrode is opposed to the pixel electrode, wherein a first opening portion is provided in the second insulating film, an inner wall surface of the first opening portion is covered with the third insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first insulating film, and the third insulating film inside the first opening portion, the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion, and wherein the storage capacitor includes the first insulating film and the third insulating film as dielectrics. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A display device comprising a pixel portion including a plurality of pixels in each of which a semiconductor element, a pixel electrode, and a storage capacitor connected with the semiconductor element are provided on a substrate;
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wherein the semiconductor element includes; a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first insulating film formed over the active layer; a second insulating film formed on the first insulating film; a third insulating film formed on the second insulating film; and a wiring provided on the third insulating film, wherein the pixel electrode over and electrically connected to the wiring, wherein a first opening portion is provided in the second insulating film, an inner wall surface of the first opening portion is covered with the third insulating film, the first insulating film and the third insulating film are in contact with each other in a region of 0.3 μ
m to 3.0 μ
m in a bottom of the first opening portion, a second opening portion is provided in a laminate including the gate insulating film, the first insulating film, and the third insulating film inside the first opening portion, the semiconductor is connected with the wiring through the first opening portion and the second opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion, andwherein the storage capacitor includes the first insulating film and the third insulating film as dielectrics. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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29. A display device comprising:
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a thin film transistor comprising a semiconductor film, provided over a substrate; a first insulating film formed over the thin film transistor; a second insulating film formed over the first insulating film; a third insulating film formed over the second insulating film a wiring provided over the third insulating film; and wherein a first opening portion is provided in the second insulating film, a second opening portion is provided in the first insulating film inside the first opening portion, and a part of a top surface of the third insulating film contacts the wiring in the first opening portion, wherein the wiring covers inner wall surfaces of the first opening portion and the second opening portion, and directly contacts the semiconductor film, and wherein a curvature radius in a top end portion of the first opening portion is continuously changed in a range of 3 μ
m to 30 μ
m. - View Dependent Claims (30, 31, 32, 33)
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Specification