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GaN compound semiconductor light emitting element and method of manufacturing the same

  • US 7,999,279 B2
  • Filed: 04/28/2010
  • Issued: 08/16/2011
  • Est. Priority Date: 10/22/2004
  • Status: Active Grant
First Claim
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1. A light emitting element, comprising:

  • a P-type semiconductor layer;

    an active layer and an N-type semiconductor layer formed on the P-type semiconductor layer;

    an N-type electrode formed on the N-type semiconductor layer;

    an insulation film formed on at least a lateral side of the N-type semiconductor layer; and

    a metallic protective layer for protecting the P-type semiconductor layer and N-type semiconductor layer.

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