GaN compound semiconductor light emitting element and method of manufacturing the same
First Claim
1. A light emitting element, comprising:
- a P-type semiconductor layer;
an active layer and an N-type semiconductor layer formed on the P-type semiconductor layer;
an N-type electrode formed on the N-type semiconductor layer;
an insulation film formed on at least a lateral side of the N-type semiconductor layer; and
a metallic protective layer for protecting the P-type semiconductor layer and N-type semiconductor layer.
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Accused Products
Abstract
The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.
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Citations
7 Claims
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1. A light emitting element, comprising:
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a P-type semiconductor layer; an active layer and an N-type semiconductor layer formed on the P-type semiconductor layer; an N-type electrode formed on the N-type semiconductor layer; an insulation film formed on at least a lateral side of the N-type semiconductor layer; and a metallic protective layer for protecting the P-type semiconductor layer and N-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification