Apparatus and method for forming optical black pixels with uniformly low dark current

• US 7,999,340 B2
• Filed: 03/07/2007
• Issued: 08/16/2011
• Est. Priority Date: 03/07/2007
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: AltaSens, Inc. (JVC Kenwood Corporation)
• Inventors: Richardson, John, Lin, Henry, Kozlowski, Lester, Rossi, Giuseppe, Patel, Gaurang, Chow, Gregory
• Primary Examiner(s): Pizarro; Marcos D
• Assistant Examiner(s): ARMAND, MARC ANTHONY
• Application Number:
  US11/715,799
• Publication Number:
  US 20080217712A1
• Time in Patent Office: 1,623 Days
• Field of Search: 257/184, 257/187, 257/259, 257/292, 257/461, 257/222, 257/432, 257/443, 257/431, 257/44, 257/433, 257/455, 257/463, 257/462, 257/466, 257/E31.119, 257/E31.127, 257/E25.005, 438/39, 438/81, 438/164
• US Class Current: 257/431
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14623 Optical shielding

Abstract

An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach is utilized combining a Ti/TiN OB layer in conjunction with in-pixel metal stubs that further occlude the focal radius of each pixel'"'"'s incoming light beam. Additional metal layers can be used to increase the opacity into the infrared region.

Claims

1. An optical black pixel comprising:

a photodiode;

a single metal layer overlaying the photodiode; and

a single Ti/TiN layer overlaying the single metal layer to increase opacity of the optical black pixel;

wherein the single metal layer comprises a metal stub formed in a top inter-level metal layer to increase opacity of the optical black pixel, and wherein the metal stub is smaller than a full pixel area.

2. The optical black pixel of claim 1, wherein the pixel further comprises a microlens covering the pixel.

3. The optical black pixel of claim 1, wherein the Ti/TiN layer is approximately 1000 Å

thick.

4. The optical black pixel of claim 1, further comprising at least one additional metal stub at a different metal layer to increase opacity in an infrared region.

5. A method of increasing the opacity in an optical black pixel, the method comprising:

forming a metal stub in a single inter-level metal layer, the metal stub covering an area of a photodiode in the pixel; and

forming a single Ti/TiN layer above the metal stub;

wherein the metal stub and the single Ti/TiN layer increase the opacity of an optical black pixel.

6. An image sensor comprising an array of clear pixels, and a plurality of optical black pixels, the optical black pixels comprising:

a metal stub formed in a single inter-level metal layer, the metal stub covering an area of a photodiode in the pixel; and

a single Ti/TiN layer formed above the metal stub;

wherein the metal stub and the single Ti/TiN layer increase the opacity of an optical black pixel.

7. The image sensor of claim 6, wherein the Ti/TiN layer is approximately 1000 Å

thick.