Aminosilanes for shallow trench isolation films

• US 7,999,355 B2
• Filed: 06/26/2009
• Issued: 08/16/2011
• Est. Priority Date: 07/11/2008
• Status: Expired due to Fees

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Weigel, Scott Jeffrey, Lee, Chia-Chien, Han, Bing, Xiao, Manchao, Cheng, Hansong, O'Neill, Mark Leonard
• Primary Examiner(s): Ghyka; Alexander G
• Application Number:
  US12/492,201
• Publication Number:
  US 20100009546A1
• Time in Patent Office: 781 Days
• Field of Search: 257/632, 257/642, 106/287.11
• US Class Current: 257/632
• CPC Class Codes: C23C 18/122 Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
• CPC Class Codes: C23C 18/1245 Inorganic substrates other than metallic
• CPC Class Codes: C23C 18/143 Radiation by light, e.g. photolysis or pyrolysis
• CPC Class Codes: C23C 18/145 Radiation by charged particles, e.g. electron beams or ion irradiation
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass

Abstract

The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of:

• • providing a semiconductor substrate having high aspect ratio features;
  • contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane;
  • forming a film by spreading the liquid formulation over the semiconductor substrate;
  • heating the film at elevated temperatures under oxidative conditions.
    Compositions for this process are also set forth.

Claims

1. A spin on composition useful for gap filling silicon dioxide depositions, comprising:

an aminosilane selected from a first group consisting of bis(tertiarybutylamino)silane and di-isopropylaminosilane and a chemical of a second group selected from the group consisting of triethoxysilane, tetraacetoxysilane, tetraethylorthosilicate, tetramethoxysilane, tetrapropoxysilane, phenyltriethoxysilane, phenyltriacetoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, methylacetoxysilane, phenyltrimethoxysilane, ethyltriethoxysilane, ethyltrimethoxysilane, ethyltriacetoxysilane, hexaethoxydisilane, hexamethoxydisilane and mixtures thereof;

a solvent selected from the group consisting of glycol ethers, alcohols, glycol ether acetates, esters, amines, amides, ketones and mixtures thereof; and

,

catalyst selected from the group consisting of hydrochloric acid, nitric acid, formic acid, acetic acid, maleic acid, oxalic acid and mixtures thereof.