Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator

• US 8,002,945 B2
• Filed: 05/29/2008
• Issued: 08/23/2011
• Est. Priority Date: 05/29/2008
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hoffman, Daniel J., Shannon, Steven C., Ramaswamy, Kartik, Miller, Matthew L., Collins, Kenneth S.
• Primary Examiner(s): Philogene; Haiss
• Application Number:
  US12/129,024
• Publication Number:
  US 20090298287A1
• Time in Patent Office: 1,181 Days
• Field of Search: 315/111.21, 315/344, 156/345.2, 156/345.28, 156/345.35, 156/345.44, 156/345.48, 15634513-34515, 156/345.24, 118/723.E, 118/723.ER, 118/723.I, 219/121.36, 219/121.43, 219/121.54
• US Class Current: 156/345.28
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.

Claims

1. A method for processing a workpiece in a plasma reactor chamber, comprising:

delivering through respective impedance match elements at least one of plural RF plasma powers into the chamber;

generating in a controller a time-varying modulation control signal corresponding to a desired process transient cycle;

modulating one of said plural RF plasma powers in accordance with said time-varying modulation control signal;

reducing reflected power at an RF generator furnishing said one or another one of said plural RF plasma powers, said reducing comprising;

(a) delivering stabilization RF power into said chamber; and

(b) modulating said stabilization RF power in response to said time-varying modulation control signal.

2. The method of claim 1 wherein said one RF plasma power comprises RF plasma source power contributing to plasma electron density, and wherein said stabilization RF power has a frequency at which over 80% of RF power contributes to plasma sheath thickness.

3. The method of claim 1 wherein said one RF plasma power comprises RF plasma source power contributing to plasma electron density, and wherein said stabilization RF power has a frequency in or below an LF frequency range.

4. The method of claim 1 wherein said one RF plasma power comprises RF plasma bias power contributing to plasma sheath voltage, and wherein said stabilization RF power has a frequency at which over 80% of RF power contributes to plasma electron density.

5. The method of claim 1 wherein said one RF plasma power comprises RF plasma bias power contributing to plasma sheath voltage, and wherein said stabilization RF power has a frequency in or above an HF frequency range.

6. The method of claim 1 wherein:

said one RF plasma power comprises one of;

(a) RF plasma source power or (b) RF plasma bias power; and

delivering said one RF plasma power comprises coupling said one plasma power to one of;

(a) an electrode at a ceiling of said chamber, (b) an electrode in a workpiece support in said chamber, (c) a coil antenna overlying a ceiling of said chamber.

7. The method of claim 6 wherein delivering stabilization RF power into said chamber comprises coupling said stabilization RF power to one of:

(a) an electrode of a wafer support in said chamber, (b) an electrode in a workpiece support in said chamber, (c) a coil antenna overlying a ceiling of said chamber.

8. The method of claim 1 wherein said stabilization RF power has a power level that is a fraction of that of said RF plasma source power.

9. The method of claim 1 wherein delivering stabilization RF power comprises delivering the stabilization RF power to the chamber without an intervening impedance match element.

10. The method of claim 1 wherein modulating said stabilization RF power comprises imposing an R-C delay and exponential response relative to said control signal in the modulation of said stabilization RF power.

11. The method of claim 1 wherein said control signal corresponds to a transient that is one of (a) rectangular wave pulsing, (b) triangular wave.

12. The method of claim 1 further comprising:

monitoring reflected RF power at an RF generator furnishing said RF plasma power, and controlling the degree of modulation of said stabilization RF power in response to said reflected RF power.

13. The method of claim 1 wherein said stabilization RF power is a first stabilization RF power and has a frequency at or below the LF frequency power range, said method further comprising:

delivering to said chamber a second stabilization RF power, and modulating said second stabilization RF power in response to said time-varying modulation control signal, said first and second stabilization RF powers having first and second frequencies, at which a majority of RF power contributes to plasma electron density and plasma sheath thickness, respectively.

14. The reactor of claim 13 wherein the modulation of said first stabilization RF power is out of phase with respect to the modulation of said second stabilization RF power.

15. A method for processing a workpiece in a plasma reactor chamber, comprising:

delivering plural RF plasma powers through respective plural impedance matches into said reactor chamber;

generating in a controller a time-varying modulation control signal corresponding to a desired process transient cycle;

modulating one or more of said RF plasma powers in accordance with said time-varying modulation control signal;

reducing fluctuation in reflected power at an RF generator furnishing said one or another one of said RF plasma powers, said reducing comprising;

(a) delivering plural stabilization RF powers of different respective RF frequencies into said chamber, and

(b) modulating said plural stabilization RF powers in response to said time-varying modulation control signal.

16. The method of claim 15 wherein said plural plasma powers comprise plasma source power and at least one plasma bias power, and wherein said different respective frequencies of said plural stabilization powers comprise at least a plasma sheath thickness stabilization frequency at or below an LF frequency range and a plasma electron density stabilization frequency at or above an HF frequency range.

17. The method of claim 15 wherein modulating said stabilization RF powers comprises imposing an R-C delay and exponential response relative to said control signal in the modulation of said stabilization RF powers.

18. The reactor of claim 15 wherein the modulations of said plural stabilization RF powers are mutually out of phase.

19. The method of claim 15 wherein said control signal corresponds to a transient that is one of (a) rectangular wave pulsing, (b) triangular wave.