Method of fabrication an integrated circuit
First Claim
Patent Images
1. A method of forming an integrated circuit comprising:
- providing a substrate; and
forming on the substrate a shield structure comprising a shield member and a ground strap, wherein the shield member is configured to extend from a centre of an inductor to beyond an outer periphery of the inductor;
wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.
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Abstract
A method of forming an integrated circuit is disclosed. The method includes providing a substrate and forming on the substrate a shield structure comprising a shield member and a ground strap. The shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion.
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Citations
26 Claims
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1. A method of forming an integrated circuit comprising:
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providing a substrate; and forming on the substrate a shield structure comprising a shield member and a ground strap, wherein the shield member is configured to extend from a centre of an inductor to beyond an outer periphery of the inductor; wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming an integrated circuit comprising:
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providing a substrate; providing an inductor; and forming on the substrate a shield structure comprising a shield member and a ground strap, wherein the shield member comprises a non-metallic portion, and the ground strap comprises a metallic portion, wherein the inductor has an inductor axis, the inductor axis being arranged to be substantially normal to a plane of the shield structure, the inductor axis passing through a centre of the inductor. - View Dependent Claims (9, 10)
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11. A method of forming a semiconductor device comprising:
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providing a substrate; forming a shield member on the substrate, the shield member comprising a first material, wherein the shield member is configured to extend from a centre of an inductor to beyond an outer periphery of the inductor; and forming a shield strap coupled to the shield member, the shield strap comprising a second material, wherein the second material comprises a metallic material and is different from the first material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of forming a semiconductor device comprising:
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providing a substrate; forming a shield member on the substrate, the shield member comprising a first material; forming a shield strap coupled to the shield member, the shield strap comprising a second material, wherein the second material comprises a metallic material and is different from the first material; and forming first and second shield elements, wherein the first shield element comprises the first material and the second element comprises a third material, the third material being doped diffusion regions. - View Dependent Claims (22)
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23. A method of forming a semiconductor device comprising:
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providing a substrate; forming a shield member on the substrate, the shield member comprising a first material; forming a shield strap coupled to the shield member, the shield strap comprising a second material, wherein the second material comprises a metallic material and is different from the first material; and forming an inductor, wherein combination of the shield member and ground strap from the inductor axis beyond a periphery of an inductor. - View Dependent Claims (24)
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25. A method of forming an integrated circuit structure comprising:
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providing a substrate; and a shield member and a ground strap formed on the substrate, wherein the shield member comprises a plurality of conductive regions formed from a non-metallic material and arranged substantially to inhibit an inducement of eddy current in the shield member by a current in an inductor disposed adjacent to a shield portion, and the ground strap comprises a metallic portion, wherein the shield member is configured to extend from a centre of the inductor to beyond an outer periphery of the inductor. - View Dependent Claims (26)
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Specification