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Field effect transistor using oxide film for channel and method of manufacturing the same

  • US 8,003,981 B2
  • Filed: 08/03/2007
  • Issued: 08/23/2011
  • Est. Priority Date: 03/17/2006
  • Status: Active Grant
First Claim
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1. A field effect transistor, comprising an amorphous oxide film as a semiconductor layer,wherein the amorphous oxide film includes a channel part, a source part, and a drain part, andwherein a hydrogen concentration of at least one of the source part and the drain part is equal to or larger than 1017/cm3, and a concentration of one of hydrogen and deuterium in the source part and the drain part is larger than a concentration of one of hydrogen and deuterium in the channel part.

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