Field effect transistor using oxide film for channel and method of manufacturing the same
First Claim
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1. A field effect transistor, comprising an amorphous oxide film as a semiconductor layer,wherein the amorphous oxide film includes a channel part, a source part, and a drain part, andwherein a hydrogen concentration of at least one of the source part and the drain part is equal to or larger than 1017/cm3, and a concentration of one of hydrogen and deuterium in the source part and the drain part is larger than a concentration of one of hydrogen and deuterium in the channel part.
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Abstract
The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
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Citations
10 Claims
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1. A field effect transistor, comprising an amorphous oxide film as a semiconductor layer,
wherein the amorphous oxide film includes a channel part, a source part, and a drain part, and wherein a hydrogen concentration of at least one of the source part and the drain part is equal to or larger than 1017/cm3, and a concentration of one of hydrogen and deuterium in the source part and the drain part is larger than a concentration of one of hydrogen and deuterium in the channel part.
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8. A field effect transistor comprising:
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an amorphous oxide semiconductor layer including a channel region; a gate electrode; a gate insulator; a drain electrode; and a source electrode, wherein the amorphous oxide semiconductor layer further includes a pair of doped regions adjacent to the source electrode or the drain electrode, each of the doped regions including at least one of hydrogen and deuterium, and wherein a hydrogen concentration of at least one of the source electrode and the drain electrode is equal to or larger than 1017/cm3 and a concentration of one of hydrogen and deuterium in the doped regions is larger than a concentration of one of hydrogen and deuterium in the channel region. - View Dependent Claims (9, 10)
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Specification