Semiconductor integrated circuit

• US 8,004,805 B2
• Filed: 08/13/2008
• Issued: 08/23/2011
• Est. Priority Date: 08/28/2007
• Status: Active Grant

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Yabu, Hiroaki, Kogami, Toshihiro, Arai, Katsuya
• Primary Examiner(s): SALCE, PATRICK R
• Application Number:
  US12/190,949
• Publication Number:
  US 20090059453A1
• Time in Patent Office: 1,105 Days
• Field of Search: 361/56, 361/111, 361/91.1, 361/91.2, 361/91.5, 361/54
• US Class Current: 361/56
• CPC Class Codes: H01L 27/0251 for MOS devices

Abstract

A semiconductor integrated circuit includes an external pad, a ground line, a first protection circuit between the external pad and the ground line, and a second protection circuit between the external pad and the ground line. The second protection circuit is formed by a first protection element, a second protection element, and a resistor. With this structure, the resistance value of the resistor is set to an arbitrary value, so that an unnecessary current which would be generated at the time of power-off of the LSI can be decreased to a value which does not deteriorate the reliability of the LSI.

Claims

1. A semiconductor integrated circuit, comprising:

an external pad for input or output of a signal;

an internal circuit connected to the external pad;

a ground line supplied with a ground potential;

a first protection circuit which is connected to a connection path extending between the external pad and the internal circuit and which is provided between the external pad and the ground line; and

a second protection circuit which is connected to the connection path extending between the external pad and the internal circuit and which is provided between the external pad and the ground line,

wherein the second protection circuit has a first protection element having an end connected to the external pad and a second protection element provided between the other end of the first protection element and the ground line, and

the second protection circuit further includes a first resistor provided between the other end of the first protection element and a power supply line for supplying a supply voltage.

2. The semiconductor integrated circuit of claim 1, wherein the first protection circuit has a first diode, the first diode having an anode connected to the ground line and a cathode connected to the external pad.

3. The semiconductor integrated circuit of claim 1, wherein the first protection element has a second diode, the second diode having an anode connected to the external pad and a cathode connected to the second protection element.

4. The semiconductor integrated circuit of claim 1, wherein the second protection element has an NMOS transistor, the NMOS transistor having a drain connected to the first protection element, a source connected to the ground line, and a gate connected to the ground line.

5. The semiconductor integrated circuit of claim 4, further comprising a second resistor provided between the gate of the NMOS transistor and the ground line.

6. The semiconductor integrated circuit of claim 1, wherein the second protection element has a third diode, the third diode having an anode connected to the first protection element and a cathode connected to the ground line.

7. The semiconductor integrated circuit of claim 2, wherein the second protection circuit is formed only by a first protection element which has a second diode, the second diode having an anode connected to the external pad and a cathode connected to the ground line.