Copper wiring module control
First Claim
1. A computer-implemented method for processing wafers, the method comprising:
- subjecting a first wafer to a first deposition process and a subsequent polishing process, the first deposition process being controlled in accordance with a first deposition model that is operable to calculate parameters for the first deposition process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process;
measuring a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer;
identifying a property of a subsequent wafer incoming to the first deposition process and calculating a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and
using the first deposition model to determine whether it is possible to achieve, by using the first deposition process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, using the first deposition model to calculate parameters for the first deposition process that are needed to achieve the pre-polish target value.
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Accused Products
Abstract
Techniques for controlling an output property during wafer processing include forwarding feedforward and feedback information between functional units in a wafer manufacturing facility. At least some embodiments of the invention envision implementing such techniques in a copper wiring module to optimize a sheet resistance or an interconnect line resistance. Initially, a first wafer property is measured during or after processing by a plating process. Subsequently, the wafer is forwarded to a polishing process. A second wafer property is then measured during or after processing by the second process. At least one of these first and second wafer properties are used to optimize the second process. Specifically, one or more target parameters of a second process recipe are adjusted in a manner that obtains a desired final output property on the wafer by using these first and second wafer properties.
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Citations
32 Claims
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1. A computer-implemented method for processing wafers, the method comprising:
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subjecting a first wafer to a first deposition process and a subsequent polishing process, the first deposition process being controlled in accordance with a first deposition model that is operable to calculate parameters for the first deposition process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process; measuring a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer; identifying a property of a subsequent wafer incoming to the first deposition process and calculating a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and using the first deposition model to determine whether it is possible to achieve, by using the first deposition process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, using the first deposition model to calculate parameters for the first deposition process that are needed to achieve the pre-polish target value. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 11, 12, 13, 14, 15, 31)
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7. A computer-implemented method for processing wafers, the method comprising:
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subjecting a first wafer to a first process and a subsequent polishing process, the first process being controlled in accordance with a first model that is operable to calculate parameters for the first process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process; measuring a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer; identifying a property of a subsequent wafer incoming to the first process and calculating a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and using the first model to determine whether it is possible to achieve, by using the first process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, using the first model to calculate parameters for the first process that are needed to achieve the pre-polish target value, wherein; the first process is an electro-chemical plating process that includes a bevel cleaning process; and calculating parameters for the first process includes calculating parameters for the bevel cleaning process.
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16. A computer program product, tangibly stored on machine readable medium, comprising instructions operable to cause a processor to operate a semiconductor wafer manufacturing system to:
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subject a first wafer to a first deposition process and a subsequent polishing process, the first deposition process being controlled in accordance with a first deposition model that is operable to calculate parameters for the first deposition process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process; measure a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer; identify a property of a subsequent wafer incoming to the first deposition process and calculate a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and use the first deposition model to determine whether it is possible to achieve, by using the first deposition process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, use the first deposition model to calculate parameters for the first deposition process that are needed to achieve the pre-polish target value. - View Dependent Claims (17, 18, 19, 20, 21, 23, 24, 25, 26, 27, 28, 29, 30, 32)
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22. A computer program product tangibly stored on machine readable medium, comprising instructions operable to cause a processor to operate a semiconductor wafer manufacturing system to:
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subject a first wafer to a first process and a subsequent polishing process, the first process being controlled in accordance with a first model that is operable to calculate parameters for the first process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process; measure a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer; identify a property of a subsequent wafer incoming to the first process and calculate a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and use the first model to determine whether it is possible to achieve, by using the first process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, use the first model to calculate parameters for the first process that are needed to achieve the pre-polish target value, wherein; the first process is an electro-chemical plating process that includes a bevel cleaning process; and calculating parameters for the first process includes calculating parameters for the bevel cleaning process.
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Specification