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Copper wiring module control

  • US 8,005,634 B2
  • Filed: 01/25/2007
  • Issued: 08/23/2011
  • Est. Priority Date: 03/22/2002
  • Status: Expired due to Fees
First Claim
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1. A computer-implemented method for processing wafers, the method comprising:

  • subjecting a first wafer to a first deposition process and a subsequent polishing process, the first deposition process being controlled in accordance with a first deposition model that is operable to calculate parameters for the first deposition process, the polishing process being controlled in accordance with a polishing model that is operable to calculate parameters for the polishing process;

    measuring a property of the first wafer while or after the first wafer is subject to the polishing process, the measuring producing a measured value for the property of the first wafer;

    identifying a property of a subsequent wafer incoming to the first deposition process and calculating a pre-polish target value for the identified property, the identifying and calculating being based on the polishing model and the measured value of the property of the first wafer; and

    using the first deposition model to determine whether it is possible to achieve, by using the first deposition process, the pre-polish target value for the identified property and, if it is determined that it is possible to achieve the pre-polish target value, using the first deposition model to calculate parameters for the first deposition process that are needed to achieve the pre-polish target value.

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