GaN compound semiconductor light emitting element and method of manufacturing the same

• US 8,008,101 B2
• Filed: 01/28/2010
• Issued: 08/30/2011
• Est. Priority Date: 10/22/2004
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Postech Foundation, Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Lee, Jong-Lam
• Primary Examiner(s): Nguyen; Thinh T
• Application Number:
  US12/695,596
• Publication Number:
  US 20100124797A1
• Time in Patent Office: 579 Days
• Field of Search: 438/29, 438/28, 438/34, 438/38, 438/39, 257 97-100, 257/E21.158, 257/E33.067
• US Class Current: 438/29
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.

Claims

1. A method of manufacturing a vertical semiconductor light emitting element, comprising the steps of:

sequentially forming an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate;

forming an insulation film on a lateral side of the N-type semiconductor layer except a portion of the P-type semiconductor layer;

forming a P-type electrode on the portion of the P-type semiconductor layer on which the insulation film is not formed;

forming a metallic support film layer in such a way to wrap around the P-type and N-type semiconductor layers;

removing the substrate; and

forming an N-type electrode on the N-type semiconductor layer.

2. The method as claimed in claim 1, further comprising the step of, after the step of forming the P-type electrode, forming a reflective layer on the P-type semiconductor layer on which the P-type electrode is formed.

3. The method as claimed in claim 1, further comprising the steps of, after the step of forming a reflective layer on the P-type semiconductor layer, removing the reflective layer on a region on which the P-type electrode will be formed and forming the P-type electrode on the region from which the reflective layer is removed.

4. The method as claimed in claim 1, further comprising the step of, after the step of forming the metallic protective film layer, forming a metallic support layer on the P-type semiconductor layer on which the metallic protective film layer is formed.

5. The method as claimed in claim 1, further comprising the steps of, after the step of removing the substrate, forming an anti-reflective layer on the N-type semiconductor layer and exposing a portion of the N-type semiconductor layer by removing a portion of the anti-reflective layer.

6. The method as claimed in claim 1, wherein the step of forming the insulation film on a lateral side of the N-type semiconductor layer except a portion of the P-type semiconductor layer comprises the steps of forming the insulation film in such a way to wrap around the P-type and N-type semiconductor layers and removing the portion of the insulation film from the P-type semiconductor layer.