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Method and apparatus for cleaning a substrate surface

  • US 8,008,166 B2
  • Filed: 06/25/2008
  • Issued: 08/30/2011
  • Est. Priority Date: 07/26/2007
  • Status: Active Grant
First Claim
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1. A method of forming an epitaxial layer on a semiconductor substrate, comprising:

  • depositing a gettering layer on a surface of a chamber component that is disposed in a processing region of a processing chamber, wherein the gettering layer comprises a material selected from the group consisting of silicon and germanium;

    oxidizing a surface of a substrate;

    positioning the substrate on a substrate support disposed in the processing chamber after depositing the gettering layer on the chamber component;

    removing at least a portion of the oxidized surface from the substrate positioned on the substrate support to expose a non-oxidized surface; and

    depositing an epitaxial layer on at least a portion of the non-oxidized surface.

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