Method for manufacturing photoelectric conversion device
First Claim
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1. A method for manufacturing a photoelectric conversion device comprising:
- forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
forming a first electrode over the first impurity silicon layer;
disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
performing crystal defect repair treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.
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Abstract
A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.
80 Citations
50 Claims
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1. A method for manufacturing a photoelectric conversion device comprising:
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forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate; forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate; forming a first electrode over the first impurity silicon layer; disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other; bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween; forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment; performing crystal defect repair treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a photoelectric conversion device comprising:
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forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate; forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate; forming a first electrode over the first impurity silicon layer; disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other; bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween; forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment; performing crystal defect elimination treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for manufacturing a photoelectric conversion device comprising:
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forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate; forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate; forming a first electrode over the first impurity silicon layer; forming an insulating layer over the first electrode; disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other; bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween; forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment; performing crystal defect repair treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for manufacturing a photoelectric conversion device comprising:
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forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate; forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate; forming a first electrode over the first impurity silicon layer; forming an insulating layer over the first electrode; disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other; bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween; forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment; performing crystal defect elimination treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43, 44)
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45. A method for manufacturing a photoelectric conversion device comprising:
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preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer; performing crystal defect repair treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown. - View Dependent Claims (46, 47)
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48. A method for manufacturing a photoelectric conversion device comprising:
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preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer; performing crystal defect elimination treatment of the single crystal silicon layer; forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown. - View Dependent Claims (49, 50)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsHirose, Takashi, Ohnuma, Hideto
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Primary Examiner(s)Booth; Richard A.
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Application NumberUS12/341,699Publication NumberTime in Patent Office981 DaysField of Search438479-481, 438151-166, 257/E21.561US Class Current438/479CPC Class CodesH01L 31/0236 Special surface texturesH01L 31/02363 of the semiconductor body i...H01L 31/076 Multiple junction or tandem...H01L 31/1804 comprising only elements of...Y02E 10/547 Monocrystalline silicon PV ...Y02P 70/50 Manufacturing or production...
