Conductive interconnect structures and formation methods using supercritical fluids
First Claim
1. A method for processing a substrate having a bond site at a first surface and a second surface opposite the first surface, comprising:
- forming a via in the substrate, the via having an opening proximate to the bond site of the substrate, a bottom portion in the substrate, and a sidewall between the opening and the bottom portion;
contacting the sidewall of the via with a precursor of a conductive material in a supercritical fluid;
depositing the conductive material on the sidewall of the via while the via is exposed to the precursor in the supercritical fluid, the conductive material being generally conformal to the sidewall of the via;
forming a vent hole in the substrate with the conformal conductive material on the sidewall of the via, the vent hole extending from the bottom portion of the via to the second surface of the substrate; and
filling the via with a fill material adjacent to the conformal conductive material after forming the vent hole.
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Accused Products
Abstract
Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns or more. The method can further include disposing a conductive material in the via while the via is exposed to a supercritical fluid. For example, copper can be disposed in the via by introducing a copper-containing precursor into the supercritical fluid and precipitating the copper from the supercritical fluid. Interconnect structures can be formed using this technique in a single generally continuous process, and can produce conductive structures having a generally uniform grain structure across the width of the via.
593 Citations
20 Claims
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1. A method for processing a substrate having a bond site at a first surface and a second surface opposite the first surface, comprising:
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forming a via in the substrate, the via having an opening proximate to the bond site of the substrate, a bottom portion in the substrate, and a sidewall between the opening and the bottom portion; contacting the sidewall of the via with a precursor of a conductive material in a supercritical fluid; depositing the conductive material on the sidewall of the via while the via is exposed to the precursor in the supercritical fluid, the conductive material being generally conformal to the sidewall of the via; forming a vent hole in the substrate with the conformal conductive material on the sidewall of the via, the vent hole extending from the bottom portion of the via to the second surface of the substrate; and filling the via with a fill material adjacent to the conformal conductive material after forming the vent hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for processing a substrate, comprising:
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forming a via in a substrate, the via having an opening proximate to a bond site proximate a first surface of the substrate, a bottom portion in the substrate, and a sidewall between the opening and the bottom portion; precipitating a conductive material from a precursor in a supercritical fluid onto the sidewall of the via, the conductive material being generally conformal to the sidewall of the via; forming a vent hole in the substrate with the conformal conductive material on the sidewall of the via, the vent hole extending from the bottom portion of the via to a second surface of the substrate opposite the first surface; and filling the via with a fill material adjacent to the conformal conductive material after forming the vent hole. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for processing a substrate, comprising:
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forming a via in a substrate having a first surface and a second surface, the via having an opening proximate to the first surface of the substrate, a bottom portion in the substrate, and a sidewall generally transverse to a width of the opening; introducing a precursor of a conductive material carried in a supercritical fluid to the sidewall of the via; precipitating the conductive material from the precursor in the supercritical fluid onto the sidewall of the via, the precipitated conductive material being generally conformal to the sidewall of the via; and after forming the conformal conductive material, forming a vent hole in the substrate extending from the bottom portion of the via to the second surface of the substrate. - View Dependent Claims (17, 18, 19, 20)
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Specification