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Semiconductor display device

  • US 8,008,666 B2
  • Filed: 02/24/2010
  • Issued: 08/30/2011
  • Est. Priority Date: 04/09/2002
  • Status: Expired due to Fees
First Claim
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1. A display device comprising:

  • a thin film transistor; and

    a capacitor,wherein the thin film transistor comprises;

    a gate electrode;

    a first insulating film over the gate electrode;

    a channel region over the gate electrode with the first insulating film interposed therebetween; and

    a source region and a drain region with the channel region therebetween,a second inorganic insulating film comprising silicon nitride so as to cover the thin film transistor, wherein the second inorganic insulating film has a first opening;

    an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening;

    a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a third opening;

    wherein the first opening and the third opening are overlapped with the second opening, andwherein the capacitor comprises;

    a first conductive film, wherein the first conductive film is the same material as the gate electrode;

    the first insulating film over the first conductive film;

    the second inorganic insulating film over the first insulating film;

    the third inorganic insulating film over the second inorganic insulating film; and

    a second conductive film over the first conductive film with the first insulating film, the second inorganic insulating film and the third inorganic insulating film interposed between the first conductive film and the second conductive film,wherein the second conductive film is electrically connected to the source region or the drain region through the first opening, the second opening and the third opening.

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