Semiconductor display device

• US 8,008,666 B2
• Filed: 02/24/2010
• Issued: 08/30/2011
• Est. Priority Date: 04/09/2002
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Yamazaki, Shunpei
• Primary Examiner(s): Dickey; Thomas L
• Assistant Examiner(s): Erdem; Fazli
• Application Number:
  US12/711,611
• Publication Number:
  US 20110049522A1
• Time in Patent Office: 552 Days
• Field of Search: 257/59, 257/72, 257/296, 257/768, 257/E23.019, 257/E27.111, 257/E21.413, 257/E21.414, 349/43
• US Class Current: 257/72
• CPC Class Codes: G02F 1/133357 Planarisation layers
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 33/52 Encapsulations
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

Claims

1. A display device comprising:

a thin film transistor; and

a capacitor,

wherein the thin film transistor comprises;

a gate electrode;

a first insulating film over the gate electrode;

a channel region over the gate electrode with the first insulating film interposed therebetween; and

a source region and a drain region with the channel region therebetween,

a second inorganic insulating film comprising silicon nitride so as to cover the thin film transistor, wherein the second inorganic insulating film has a first opening;

an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening;

a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a third opening;

wherein the first opening and the third opening are overlapped with the second opening, and

wherein the capacitor comprises;

a first conductive film, wherein the first conductive film is the same material as the gate electrode;

the first insulating film over the first conductive film;

the second inorganic insulating film over the first insulating film;

the third inorganic insulating film over the second inorganic insulating film; and

a second conductive film over the first conductive film with the first insulating film, the second inorganic insulating film and the third inorganic insulating film interposed between the first conductive film and the second conductive film,

wherein the second conductive film is electrically connected to the source region or the drain region through the first opening, the second opening and the third opening.

2. The display device according to claim 1, wherein the source region, the drain region, and the channel region are formed in one semiconductor film.

3. The display device according to claim 1, wherein an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening.

4. The display device according to claim 1, wherein a portion of a top surface of the second inorganic insulating film is inside the second opening so that the portion of the top surface of the second inorganic insulating film is not covered with the organic resin film at a bottom of the second opening.

5. The display device according to claim 1, wherein the organic resin film is photosensitive.

6. The display device according to claim 1, wherein a section of an edge portion of the second opening curves.

7. The display device according to claim 1, wherein the organic resin film has a convex inner wall surface in the second opening, and

wherein a curvature radius of the convex inner wall surface is continuously changed.

8. The display device according to claim 7, wherein the curvature radius of the convex inner wall surface is 3 μ

m to 30 μ

m.

9. The display device according to claim 1, wherein the third inorganic insulating film is in contact with the second inorganic insulating film in the second opening of the organic resin film.

10. A display device comprising:

a thin film transistor; and

a capacitor,

wherein the thin film transistor comprises;

a gate electrode;

a first insulating film over the gate electrode;

a channel region over the gate electrode with the first insulating film interposed therebetween; and

a source region and a drain region with the channel region therebetween,

a second inorganic insulating film comprising silicon nitride so as to cover the thin film transistor, wherein the second inorganic insulating film has a first opening;

an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening and a third opening;

a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a fourth opening;

wherein the first opening and the fourth opening are overlapped with the second opening, and

wherein the capacitor comprises;

a first conductive film, wherein the first conductive film is the same material as the gate electrode;

the first insulating film over the first conductive film;

the second inorganic insulating film over the first insulating film;

the third inorganic insulating film on and in contact with the second inorganic insulating film; and

a second conductive film over the first conductive film with the first insulating film, the second inorganic insulating film and the third inorganic insulating film interposed therebetween,

wherein the third opening is provided over the first conductive film,

wherein the second conductive film is provided in the third opening,

wherein the second conductive film is electrically connected to the source region or the drain region through the first opening, the second opening and the fourth opening.

11. The display device according to claim 10, wherein the source region, the drain region, and the channel region are formed in one semiconductor film.

12. The display device according to claim 10, wherein an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening.

13. The display device according to claim 10, wherein a portion of a top surface of the second inorganic insulating film is inside the second opening so that the portion of the top surface of the second inorganic insulating film is not covered with the organic resin film at a bottom of the second opening.

14. The display device according to claim 10, wherein the organic resin film is photosensitive.

15. The display device according to claim 10, wherein a section of an edge portion of the second opening and a section of an edge portion of the third opening curve.

16. The display device according to claim 10, wherein the organic resin film has a convex inner wall surface in the second opening, and

wherein a curvature radius of the convex inner wall surface is continuously changed.

17. The display device according to claim 16, wherein the curvature radius of the convex inner wall surface is 3 μ

m to 30 μ

m.

18. The display device according to claim 10, wherein the third inorganic insulating film is in contact with the second inorganic insulating film in the second opening of the organic resin film.

19. A display device comprising:

a gate electrode;

a first capacitor electrode, wherein the first capacitor electrode is the same material as the gate electrode;

a first insulating film over the gate electrode and the first capacitor electrode;

a channel region over the gate electrode with the first insulating film interposed therebetween; and

a source region and a drain region with the channel region therebetween,

a second inorganic insulating film comprising silicon nitride over the first insulating film, the channel region, the source region and the drain region, wherein the second inorganic insulating film has a first opening;

an organic resin film over the second inorganic insulating film, wherein the organic resin film has at least a second opening,;

a third inorganic insulating film comprising silicon nitride over the organic resin film, wherein the third inorganic insulating film has a third opening; and

a second capacitor electrode over the third inorganic insulating film,

wherein the first opening and the third opening are overlapped with the second opening, and

wherein the first insulating film, the second inorganic insulating film, the organic resin film and the third inorganic insulating film are interposed between the first capacitor electrode and the second capacitor electrode, and

wherein the second capacitor electrode is electrically connected to the source region or the drain region through the first opening, the second opening and the third opening.

20. The display device according to claim 19, wherein the source region, the drain region, and the channel region are formed in one semiconductor film.

21. The display device according to claim 19, wherein an edge of the second opening at a bottom of the second opening surrounds an edge of the first opening at a top of the first opening.

22. The display device according to claim 19, wherein a portion of a top surface of the second inorganic insulating film is inside the second opening so that the portion of the top surface of the second inorganic insulating film is not covered with the organic resin film at a bottom of the second opening.

23. The display device according to claim 19, wherein the organic resin film is photosensitive.

24. The display device according to claim 19, wherein a section of an edge portion of the second opening curves.

25. The display device according to claim 19, wherein the organic resin film has a convex inner wall surface in the second opening, and

wherein a curvature radius of the convex inner wall surface is continuously changed.

26. The display device according to claim 25, wherein the curvature radius of the convex inner wall surface is 3 μ

m to 30 μ

m.

27. The display device according to claim 19, wherein the third inorganic insulating film is in contact with the second inorganic insulating film in the second opening of the organic resin film.