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Light emitting device

  • US 8,008,672 B2
  • Filed: 12/28/2010
  • Issued: 08/30/2011
  • Est. Priority Date: 12/29/2009
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between first and second conductive semiconductor layers;

    a first amorphous layer on the light emitting structure; and

    a nano structure having a nano-size grain shape on the first amorphous layer, wherein the nano structure comprises a first nano structure on the first amorphous layer and a second nano structure on the first nano structure, and wherein the first nano structure comprises AlN or GaN and the second nano structure comprises InGaN.

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