Light emitting device

• US 8,008,672 B2
• Filed: 12/28/2010
• Issued: 08/30/2011
• Est. Priority Date: 12/29/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Liu, Chunli, Moon, Yong Tae
• Primary Examiner(s): Nguyen; Dao H
• Application Number:
  US12/980,136
• Publication Number:
  US 20110156088A1
• Time in Patent Office: 245 Days
• Field of Search: 257/13, 257/79, 257/88, 257/98, 257/E33.001, 257/E33.005, 257/E33.008, 438/27, 438/34, 438/45
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A light emitting device includes at least one particle over the light emitter. Light at a first wavelength travels from the emitter along a first path adjacent to the particle and at a second wavelength along a second path that passes through the particle. The particle converts the light on the second path from the first wavelength into a second wavelength. The light at the first wavelength mixes with the light at the second wavelength to form light of a third wavelength, which may be white light or another color.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between first and second conductive semiconductor layers;

a first amorphous layer on the light emitting structure; and

a nano structure having a nano-size grain shape on the first amorphous layer, wherein the nano structure comprises a first nano structure on the first amorphous layer and a second nano structure on the first nano structure, and wherein the first nano structure comprises AlN or GaN and the second nano structure comprises InGaN.

2. The light emitting device as claimed in claim 1, wherein the nano structure comprises a nitride semiconductor nano structure.

3. The light emitting device as claimed in claim 2, wherein the nano structure comprises a material having a compositional formula of AlxInyGa(1-x-y)N (0≦

x≦

1, 0≦

x≦

1), 0≦

x+y≦

1).

4. The light emitting device as claimed in claim 1, wherein the nano structure comprises a plurality of stack structures of the first and second nano structures.

5. The light emitting device as claimed in claim 1, further comprising a second amorphous layer on the nano structure.

6. The light emitting device as claimed in claim 1, wherein the first amorphous layer comprises an amorphous nitride layer or an amorphous oxide layer.

7. The light emitting device as claimed in claim 1, wherein the first amorphous layer comprises a first ohmic dielectric layer having an ohmic property in terms of electric contact relation with respect to the light emitting structure.

8. The light emitting device as claimed in claim 7, further comprising a second ohmic dielectric layer on the nano structure.

9. A light emitting device package comprising:

a light emitting device including a light emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between first and second conductive semiconductor layers, a first amorphous layer on the light emitting structure, and a nano structure having a nano-size grain shape on the first amorphous layer; and

a package body in which the light emitting device is installed, wherein the nano structure comprises a first nano structure on the first amorphous layer and a second nano structure on the first nano structure, and wherein the first nano structure comprises AlN or GaN and the second nano structure comprises InGaN.