Semiconductor light emitting device

• US 8,008,683 B2
• Filed: 03/18/2009
• Issued: 08/30/2011
• Est. Priority Date: 10/22/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung LED Co., Ltd. (Samsung Electronics Co. Ltd.)
• Inventors: Kim, Yu Seung, Lee, Jin Bock, Choi, Pun Jae
• Primary Examiner(s): Thomas; Tom
• Assistant Examiner(s): Rodela; Eduardo A
• Application Number:
  US12/406,568
• Publication Number:
  US 20100096652A1
• Time in Patent Office: 895 Days
• Field of Search: 257/98, 257/99, 257/E31.124, 257/79, 257/E33.062, 257/E33.065, 257/E33.066
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.

Claims

1. A semiconductor light emitting device comprising:

a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, and

an electrode pad unit disposed on an upper surface of the second electrode layer,

wherein the second electrode layer includes at least one region where a portion of an interface in contact with the second semiconductor layer is exposed,

the first electrode layer penetrates the second electrode layer, the second semiconductor layer, and the active layer and is electrically connected to the first semiconductor layer by being extended to predetermined regions of the first semiconductor layer through a plurality of contact holes which penetrate the predetermined regions of the first semiconductor layer,

the insulating layer insulates the conductive substrate and the first electrode layer from the second electrode layer, the second semiconductor layer and the active layer by being formed between the first electrode layer and the second electrode layer and on side surfaces of the contact holes.

2. The semiconductor light emitting device of claim 1, wherein the contact holes are uniformly arranged.

3. The semiconductor light emitting device of claim 2, wherein the number of the contact holes is 5 to 50.

4. The semiconductor light emitting device of claim 2, wherein a contact area between the first electrode layer and the semiconductor layer for the area of 1,000,000 μ

m² of the semiconductor light emitting device is 30,000 to 130,000 μ

m².

5. The semiconductor light emitting device of claim 2, wherein a distance between central points of adjacent contact holes among the contact holes is 100 to 400 μ

m.

6. The semiconductor light emitting device of claim 1, wherein the exposed region of the second electrode layer is formed at a corner of the semiconductor light emitting device.

7. The semiconductor light emitting device of claim 1, wherein the second electrode layer reflects light generated from the active layer.

8. The semiconductor light emitting device of claim 7, wherein the second electrode layer includes any one of Ag, Al, and Pt.

9. The semiconductor light emitting device of claim 1, wherein the conductive substrate is a metallic substrate including any one of Au, Ni, Cu, and W.

10. The semiconductor light emitting device of claim 1, wherein the conductive substrate includes any one of Si, Ge, and GaAs.

11. The semiconductor light emitting device of claim 1, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is less than or the same as 13% of an area of the semiconductor light emitting device.