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Transistor structure having a conductive layer formed contiguous in a single deposition

  • US 8,008,720 B2
  • Filed: 10/09/2008
  • Issued: 08/30/2011
  • Est. Priority Date: 10/09/2008
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a drain region of a first conductivity type;

    a pedestal comprising at least a first dielectric layer, a second dielectric layer, and a third dielectric layer wherein the pedestal overlies at least a portion of the drain region and wherein the pedestal has a sidewall surface and a first major surface; and

    a first conductive layer overlying the sidewall surface and the first major surface of the pedestal wherein a vertical portion of the first conductive layer adjacent to the sidewall surface of the pedestal comprises a gate of the transistor, wherein the first conductive layer is formed contiguous in a single deposition, and wherein a side wall of the first dielectric layer is etched to create an isotropic profile at a drain side of the gate.

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