Method and system for testing P2 stiffness of a magnetoresistance transducer at the wafer level
First Claim
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1. A method of testing P2 stiffness of a magnetoresistance MR sensor stack including a P2 pinned layer, comprising the steps of:
- applying an external magnetic field to the MR sensor stack, the external magnetic field oriented substantially perpendicular to a magnetic field of the P2 pinned layer;
varying an amplitude of the external magnetic field;
measuring a change in a resistance of the MR sensor stack in response to the varying amplitude of the external magnetic field; and
calculating the P2 stiffness based on the measured change in resistance.
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Abstract
A method of testing P2 stiffness of a magnetoresistance (MR) sensor stack including a P2 pinned layer is provided. The method comprises the step of applying an external magnetic field to the MR sensor stack. The external magnetic field is oriented substantially perpendicular to a magnetic field of the P2 pinned layer. The method further comprises varying an amplitude of the external magnetic field, measuring a change in a resistance of the MR sensor stack in response to the varying amplitude of the external magnetic field, and calculating the P2 stiffness based on the measured change in resistance.
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Citations
15 Claims
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1. A method of testing P2 stiffness of a magnetoresistance MR sensor stack including a P2 pinned layer, comprising the steps of:
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applying an external magnetic field to the MR sensor stack, the external magnetic field oriented substantially perpendicular to a magnetic field of the P2 pinned layer; varying an amplitude of the external magnetic field; measuring a change in a resistance of the MR sensor stack in response to the varying amplitude of the external magnetic field; and calculating the P2 stiffness based on the measured change in resistance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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