Method for manufacturing liquid discharge head

• US 8,012,773 B2
• Filed: 04/28/2010
• Issued: 09/06/2011
• Est. Priority Date: 06/11/2009
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hayakawa, Kazuhiro
• Primary Examiner(s): Mulpuri; Savitri
• Application Number:
  US12/769,146
• Publication Number:
  US 20100317130A1
• Time in Patent Office: 496 Days
• Field of Search: 438/21, 216/27
• US Class Current: 438/21
• CPC Class Codes: B41J 2/1603 of the front shooter type
• CPC Class Codes: B41J 2/1628 dry etching
• CPC Class Codes: B41J 2/1635 dividing the wafer into individual chips
• CPC Class Codes: B41J 2/1639 sacrificial molding
• CPC Class Codes: B41J 2/1646 thin film formation by sputtering

Abstract

A method for manufacturing a liquid discharge head includes providing a first layer containing a metal nitride to at least a portion on one surface of a silicon substrate corresponding to a supply port; providing a second layer on the first layer, the second layer including any one of aluminum, copper, and gold, or an alloy thereof; etching a portion of the silicon substrate corresponding to the supply port by reactive ion etching in a direction from the reverse surface towards the one surface so that the etched region reaches the first layer; and removing a portion of the first layer corresponding to the supply port and then removing a portion of the second layer corresponding to the supply port, thus forming the supply port.

Claims

1. A method for manufacturing a liquid discharge head including a silicon substrate having one surface, energy generation elements for generating energy used for discharging a liquid being provided at a side of the one surface, and a supply port which is provided so as to penetrate through the one surface of the silicon substrate and a reverse surface of the one surface for supplying the liquid to the energy generation elements, the method comprising:

providing a first layer containing a metal nitride to at least a portion on the one surface of the silicon substrate corresponding to the supply port;

providing a second layer on the first layer, the second layer comprising any one of aluminum, copper, and gold, or an alloy thereof;

etching a portion of the silicon substrate corresponding to the supply port by reactive ion etching in a direction from the reverse surface towards the one surface so that the etched region reaches the first layer;

removing a portion of the first layer corresponding to the supply port and then removing a portion of the second layer corresponding to the supply port, thus forming the supply port; and

forming a material layer comprising materials including the metal nitride for forming the first layer on the one surface of the silicon substrate, so that the first layer and a heat generation layer for generating thermal energy used as the energy are formed from the material layer,

wherein the metal nitride is selected from the group consisting of TaSiN and WSiN.

2. The method according to claim 1, wherein the second layer comprises an alloy of aluminum and copper.