Multi-directional trenching of a die in manufacturing superjunction devices
First Claim
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1. A method of manufacturing a superjunction device, the method comprising:
- (a) providing a semiconductor wafer, the semiconductor wafer including at least one die;
(b) forming at least one first trench in the at least one die, the at least one first trench having a first orientation and defining a first area; and
(c) forming at least one second trench in the at least one die, the at least one second trench having a second orientation that is different from the first orientation, the at least one second trench defining a second area such that a ratio of the first area to the second area is about one-to-one.
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Abstract
A method of manufacturing a superjunction device includes providing a semiconductor wafer having at least one die. At least one first trench having a first orientation is formed in the at least one die. At least one second trench having a second orientation that is different from the first orientation is formed in the at least one die.
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Citations
15 Claims
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1. A method of manufacturing a superjunction device, the method comprising:
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(a) providing a semiconductor wafer, the semiconductor wafer including at least one die; (b) forming at least one first trench in the at least one die, the at least one first trench having a first orientation and defining a first area; and (c) forming at least one second trench in the at least one die, the at least one second trench having a second orientation that is different from the first orientation, the at least one second trench defining a second area such that a ratio of the first area to the second area is about one-to-one. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a superjunction device, the method comprising:
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(a) providing a semiconductor wafer, the semiconductor wafer including at least one die; (b) forming a first plurality of trenches in the at least one die, each of the first plurality of trenches having a first orientation, the first plurality of trenches defining a first area; and (c) forming a second plurality of trenches in the at least one die, each of the second plurality of trenches having a second orientation that is different from the first orientation, the second plurality of trenches defining a second area such that a ratio of the first area to the second area is about one-to-one. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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Specification