Process to make high-K transistor dielectrics
First Claim
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1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
- providing a substrate having STIs formed therein;
forming a high-k dielectric layer between the STIs;
the high-k dielectric layer having impurities therein and being formed by an ALCVD process;
annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer without additional oxidation of the high-k dielectric layer; and
forming a gate layer upon the annealed high-k dielectric layer.
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Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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19 Claims
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1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
- providing a substrate having STIs formed therein;
forming a high-k dielectric layer between the STIs;
the high-k dielectric layer having impurities therein and being formed by an ALCVD process;
annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer without additional oxidation of the high-k dielectric layer; and
forming a gate layer upon the annealed high-k dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
- providing a substrate having STIs formed therein;
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