Delivery of vapor precursor from solid source

• US 8,012,876 B2
• Filed: 12/02/2008
• Issued: 09/06/2011
• Est. Priority Date: 12/02/2008
• Status: Active Grant

• Current Assignee: ASM International NV
• Original Assignee: ASM International NV
• Inventors: Oosterlaken, Theodorus G. M.
• Primary Examiner(s): Lee; Calvin
• Application Number:
  US12/326,792
• Publication Number:
  US 20100136772A1
• Time in Patent Office: 1,008 Days
• Field of Search: 438679-681, 438/497, 438/782, 257761-766, 427582-590
• US Class Current: 438/680
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence

Abstract

A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the storage container to a liquid holding container. The liquid state precursor is transported from the liquid holding container to a reaction chamber. The molten precursor allows the precursor to be metered in the liquid state. The storage container can be heated only when necessary to replenish the liquid holding container, thereby reducing the possibility of thermal decomposition of the precursor.

Claims

1. A method for semiconductor processing comprising:

providing a precursor in a solid state in a storage container;

intermittently heating the storage container to a temperature above the melting temperature of the precursor, thereby intermittently transforming the precursor from the solid state into a liquid state in the storage container;

flowing the precursor, while in the liquid state, from the storage container into a liquid holding container; and

flowing the precursor from the liquid holding container to a reaction chamber.

2. The method of claim 1, wherein the precursor in the solid state has a thermal stability and a melting point such that it can be maintained at a temperature above the melting point for at least 24 hours without significant thermal decomposition.

3. The method of claim 1, wherein the precursor comprises a precursor selected from the group consisting of TaF₅, NbF₅, MoF₅, Sr(Cp) and Ba(Cp).

4. The method of claim 1, further comprising providing an evaporating chamber, wherein flowing the precursor from the liquid holding container to the reaction chamber comprises:

flowing the precursor in the liquid state into the evaporation chamber,

vaporizing the precursor in the evaporation chamber; and

subsequently flowing the precursor to the reaction chamber.

5. The method of claim 1, wherein all conduits between the storage container and the reaction chamber are maintained at a temperature above the melting point of the precursor.

6. The method of claim 1, wherein, after flowing a desired quantity of precursor from the storage container to the liquid holding container, the storage container is cooled to a temperature below the melting point of the precursor.

7. The method of claim 1, wherein the storage container is unevenly heated during transforming the precursor into the liquid state.

8. The method of claim 7, wherein, during unevenly heating the storage container, a lower region of the storage container is heated to a temperature above the melting point of the precursor and an upper region of the container has a temperature below the melting point of the precursor.

9. The method of claim 7, further comprising providing a precursor feed line for feeding the precursor to the reaction chamber, wherein the precursor feed line is in liquid communication with the lower region of the storage container and wherein the upper region of the storage container is pressurized with gas.

10. The method of claim 7, wherein the lower region of the storage container is cooled below the melting point between intermittently transforming the precursor into the liquid state.

11. The method of claim 1, further comprising metering a flow of the precursor between the liquid holding container and the reaction chamber.

12. The method of claim 11, wherein the flow of the precursor is metered in the liquid state between the liquid holding container and the reaction chamber.

13. The method of claim 11, wherein metering the precursor is performed with a liquid flow controller heated to a temperature about 40°

C. or more higher than room temperature.

14. The method of claim 11, wherein flowing the precursor from the liquid holding container to the reaction chamber comprises introducing the metered precursor into the reaction chamber, wherein introducing the metered precursor into the reaction chamber deposits a film of material on a substrate in the reaction chamber.

15. The method of claim 14, wherein depositing the material comprises performing a chemical vapor deposition or an atomic layer deposition.

16. The method of claim 1, wherein transforming the precursor comprises heating the precursor to a temperature of about 130°

C. or less.

17. The method of claim 16, wherein transforming the precursor comprises heating the precursor to a temperature about 40°

C. or more higher than room temperature.