Semiconductor device having MOS-transistor formed on semiconductor substrate and method for manufacturing thereof
First Claim
1. A semiconductor device, comprising:
- MOS transistors sequentially arranged in a plane direction of a substrate;
a first device isolation area for separating the diffusion layers that function as a source/drain area of the MOS transistors adjacent to each other on the surface of the substrate; and
a second device isolation area for separating channel areas of the MOS transistors adjacent to each other in a layer that is lower than a layer that has the first device isolation area,wherein a gate electrode and a wiring portion for connecting between the gate electrodes to each other are disposed into a layer lower than a surface of the substrate in which a diffusion layer has been formed.
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0 Petitions
Accused Products
Abstract
A semiconductor device comprises MOS transistors sequentially arranged in the plane direction of a substrate, wherein a gate electrode and a wiring portion for connecting between the gate electrodes to each other are implanted into a layer that is lower than a surface of the substrate in which a diffusion layer has been formed. A first device isolation area with a STI structure for separating the diffusion layers that function as a source/drain area is formed on the surface of the substrate. A second device isolation area with the STI structure for separating channel areas of the MOS transistors adjacent to each other is formed in a layer that is lower than a layer that has the first device isolation area.
48 Citations
11 Claims
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1. A semiconductor device, comprising:
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MOS transistors sequentially arranged in a plane direction of a substrate; a first device isolation area for separating the diffusion layers that function as a source/drain area of the MOS transistors adjacent to each other on the surface of the substrate; and a second device isolation area for separating channel areas of the MOS transistors adjacent to each other in a layer that is lower than a layer that has the first device isolation area, wherein a gate electrode and a wiring portion for connecting between the gate electrodes to each other are disposed into a layer lower than a surface of the substrate in which a diffusion layer has been formed. - View Dependent Claims (2)
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3. A semiconductor device, comprising:
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a substrate; a plurality of MOS transistors each having a gate electrode disposed under a top surface of the substrate; a wiring layer for connecting between the gate electrodes, the wiring layer being disposed under the top surface of the substrate, and the wiring layer extending in a first direction; a first isolation region formed in the substrate for separating source/drain areas of the MOS transistors adjacent to each other in the first direction; and a second isolation region formed in the substrate for separating channel areas of the MOS transistors adjacent to each other in the first direction, wherein the second isolation region is disposed under the wiring layer. - View Dependent Claims (4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising MOS transistors sequentially arranged in a plane direction of a substrate, comprising:
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forming a first device isolation area for separating diffusion layers that function as a source/drain area of the MOS transistors adjacent to each other on a surface of the substrate; and forming a second device isolation area for separating channel areas of the MOS transistors adjacent to each other in a layer that is lower than a layer that has the first device isolation area. - View Dependent Claims (8, 9, 10, 11)
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Specification