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Power semiconductor devices with shield and gate contacts and methods of manufacture

  • US 8,013,387 B2
  • Filed: 12/26/2007
  • Issued: 09/06/2011
  • Est. Priority Date: 05/20/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a plurality of active trenches that define an active area;

    an edge area that is located on one side of the active area;

    the plurality of active trenches comprising a lower shield poly, an upper gate poly, a first oxide layer and a second oxide layer wherein the first oxide layer separates the lower shield poly from the upper gate poly and the second oxide layer covers the upper gate poly;

    wherein the lower shield poly, upper gate poly, first oxide layer and second oxide layer conform to the shape of the active trench and extend from the active trench to a surface of the edge area;

    wherein, the edge area comprises a first opening that extends through the first oxide layer to the lower shield poly and a second opening that extends through the second oxide layer to the upper gate poly.

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