Display device and manufacturing method of the same

• US 8,013,947 B2
• Filed: 12/03/2009
• Issued: 09/06/2011
• Est. Priority Date: 03/14/2003
• Status: Expired due to Fees

• Current Assignee: Hitachi Displays Limited (Japan Display Incorporated), Panasonic Liquid Crystal Display Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Hitachi Displays Limited (Japan Display Incorporated)
• Inventors: Kiya, Yoshiyuki, Takano, Takao, Horii, Toshikazu, Watanabe, Kunihiko
• Primary Examiner(s): CHIEN, LUCY P
• Application Number:
  US12/591,874
• Publication Number:
  US 20100085532A1
• Time in Patent Office: 642 Days
• Field of Search: None
• US Class Current: 349/55
• CPC Class Codes: G02F 1/136259 Repairing; Defects

Abstract

Conventionally, when a protective/insulation film is present above a film to be corrected, only a defect of the film to be corrected below such an upper-layer film is corrected without damaging the upper-layer film. A display region of a display device has an insulation film, a semiconductor film and a conductive film formed in a given pattern and stacked on a substrate. When at least one of a correction portion out of a correction portion which separates a short-circuit defect, a correction portion which connects an opening defect, a correction portion which removes a standard deviation defect, and a correction portion which separates a standard deviation defect of the pattern is corrected, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film intact.

Claims

1. A manufacturing method of a display device comprising:

a film forming step in which a plurality of films including an insulation film, a semiconductor film and a conductive film are stacked onto a substrate; and

a defect portion correcting step in which at least one correction out of a short-circuit defect portion separation correction which separates a short-circuit defect, an open defect portion connection correction which performs a connection of an open defect, a standard deviation defect portion removal correction which performs a removal of a standard deviation defect, and a standard deviation defect portion separation correction which performs a separation of a standard deviation defect portion generated in the formed film is performed, wherein

at a point of correction time of the defect portion correction step, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film as it is,

the correction is performed by irradiating laser beams,

an output of the laser beams is set to 0.02 W/cm² or less,

the laser beams are irradiated from above the substrate through the upper-layer film to the correction portion, and

a wavelength of the laser beams is set to a wavelength that allows the laser beams to be more easily absorbed in the film to be corrected than in the upper-layer film.

2. A manufacturing method of a display device according to claim 1, wherein the laser beams are irradiated to the same portion by dividing the laser beams plural times.

3. A manufacturing method of a display device according to claim 2, wherein the laser beams are irradiated to the same portion by dividing the laser beams at least 10 times.

4. A manufacturing method of a display device according to claim 2, wherein an irradiation interval of the laser beams is equal to or more than 0.3 seconds.

5. A manufacturing method of a display device according to claim 1, wherein when the film to be corrected is an amorphous silicon semiconductor film, a wavelength of the laser beams is set to 250 nm to 360 nm.

6. A manufacturing method of a display device according to claim 1, wherein the laser beams to be irradiated to the same portion are irradiated by dividing the laser beams 10 or more times.

7. A manufacturing method of a display device according to claim 1, wherein the upper-layer film includes at least either one of an insulation film and a transparent conductive film.

8. A manufacturing method of a display device according to claim 1, wherein the semiconductor film is an amorphous semiconductor film and the amorphous semiconductor film is subjected to the separation correction or the removal correction.

9. A manufacturing method of a display device according to claim 1, wherein an activated layer of a thin film transistor which has a source electrode and a drain electrode is constituted by the semiconductor film, the semiconductor film includes an intrinsic semiconductor film and a contact film formed over the intrinsic semiconductor film, wherein the separation correction of a defect which short-circuits the source electrode and the drain electrode through the contact film is performed by removing the contact film present between the source electrode and the drain electrode together with a portion of the intrinsic semiconductor film.

10. A manufacturing method of a display device according to claim 1, wherein the conductive film is at least one of a scanning signal line, a video signal line and a pixel electrode, and the separation correction is at least one of corrections of a short-circuit defect between the scanning signal lines, a short-circuit defect between the video signal lines and a short-circuit defect between the pixel electrodes.

11. A manufacturing method of a display device according to claim 10, wherein the pixel electrode is a transparent conductive film.

12. A manufacturing method of a display device according to claim 1, wherein a normal display is performed by the correction.