Broad band referencing reflectometer
First Claim
1. A method for analyzing a scattering or diffracting structure that includes a pattern having a pitch, the method comprising:
- providing a below deep ultra-violet (DUV) wavelength reflectometer configured for normal incidence operation and having a light source that provides at least below DUV wavelength light, including vacuum ultra-violet (VUV) wavelengths at and below the pitch of the pattern;
obtaining reflectance data from the scattering or diffracting structure, including reflectance data for the VUV wavelengths; and
utilizing the reflectance data to obtain dimension information of the pattern.
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Accused Products
Abstract
A spectroscopy system is provided which is optimized for operation in the VUV region and capable of performing well in the DUV-NIR region. Additionally, the system incorporates an optical module which presents selectable sources and detectors optimized for use in the VUV and DUV-NIR. As well, the optical module provides common delivery and collection optics to enable measurements in both spectral regions to be collected using similar spot properties. The module also provides a means of quickly referencing measured data so as to ensure that highly repeatable results are achieved. The module further provides a controlled environment between the VUV source, sample chamber and VUV detector which acts to limit in a repeatable manner the absorption of VUV photons. The use of broad band data sets which encompass VUV wavelengths, in addition to the DUV-NIR wavelengths enables a greater variety of materials to be meaningfully characterized. Array based detection instrumentation may be exploited to permit the simultaneous collection of larger wavelength regions.
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Citations
20 Claims
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1. A method for analyzing a scattering or diffracting structure that includes a pattern having a pitch, the method comprising:
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providing a below deep ultra-violet (DUV) wavelength reflectometer configured for normal incidence operation and having a light source that provides at least below DUV wavelength light, including vacuum ultra-violet (VUV) wavelengths at and below the pitch of the pattern; obtaining reflectance data from the scattering or diffracting structure, including reflectance data for the VUV wavelengths; and utilizing the reflectance data to obtain dimension information of the pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for analyzing a scattering or diffracting structure, comprising:
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providing a below deep ultra-violet (DUV) wavelength referencing reflectometer, comprising a source beam channel configured for normal incidence operation and having a non-polarizing optical system that provides at least below deep ultra-violet wavelength light, and comprising a reference beam channel that is balanced with the source beam channel; and utilizing scatterometry techniques for obtaining dimensional information of the scattering or diffracting structure. - View Dependent Claims (9, 10, 11, 12)
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13. A scatterometry method to determine dimensional information of a patterned structure having a pitch, the method comprising:
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providing a reflectometer that utilizes at least in part below deep ultra-violet (DUV) wavelength light, including vacuum ultra-violet (VUV) wavelengths at and below the pitch; obtaining reflectance data from the scattering or diffracting structure, including reflectance data for at least some of the VUV wavelengths; and utilizing scatterometry techniques to analyze the reflectance data to obtain dimension information of the patterned structure. - View Dependent Claims (14, 15, 16, 17)
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18. A method for analyzing a scattering or diffracting structure, comprising:
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providing a below deep ultra-violet (DUV) wavelength reflectometer configured for normal incidence operation and having a light source that provides at least below DUV wavelength light; obtaining reflectance data from the scattering or diffracting structure, including reflectance data for wavelengths below DUV wavelengths; and utilizing the reflectance data to obtain dimension information of the scattering or diffracting structure including at least one dimension of 20 Å
or less. - View Dependent Claims (19, 20)
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Specification