Multiple series passive element matrix cell for three-dimensional arrays
First Claim
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1. A memory array, comprising:
- a plurality of nonvolatile memory cells, wherein each of the plurality of memory cells comprises at least two two-terminal non-linear steering elements arranged in series and a resistivity switching storage element arranged in series with the at least two two-terminal non-linear steering elements;
a plurality of word lines; and
a plurality of bit lines,wherein the plurality of nonvolatile memory cells, word lines and bit lines are arranged to comprise a monolithic three dimensional memory array.
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Abstract
A nonvolatile memory cell including at least two two-terminal non-linear steering elements arranged in series, and a resistivity switching storage element arranged in series with the at least two two-terminal non-linear steering elements. A memory array, comprising a plurality of the nonvolatile memory cells is also described. A method of forming a nonvolatile memory cell is also described.
37 Citations
28 Claims
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1. A memory array, comprising:
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a plurality of nonvolatile memory cells, wherein each of the plurality of memory cells comprises at least two two-terminal non-linear steering elements arranged in series and a resistivity switching storage element arranged in series with the at least two two-terminal non-linear steering elements; a plurality of word lines; and a plurality of bit lines, wherein the plurality of nonvolatile memory cells, word lines and bit lines are arranged to comprise a monolithic three dimensional memory array. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A memory array, comprising:
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a plurality of nonvolatile memory cells, wherein each of the plurality of memory cells comprises two two-terminal non-linear steering elements arranged in series and a resistivity switching storage element arranged between or on one side of both of the two non-linear switching storage elements; a plurality of word lines; and a plurality of bit lines. - View Dependent Claims (19, 20, 21, 22)
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23. A memory array, comprising:
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a plurality of nonvolatile memory cells, wherein each of the plurality of memory cells comprises four two terminal non-linear steering elements arranged in series and a resistivity switching storage element in series with the four two terminal non-linear steering elements; a plurality of word lines; and a plurality of bit lines. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification