Composition for oxide semiconductor thin film and field effect transistor using the composition
First Claim
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1. A composition for an oxide semiconductor thin film, comprising:
- from about 50 to about 99 mol % of a zinc oxide (ZnO);
from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and
remaining molar percentage of an aluminum oxide (AlOx);
wherein said oxide semiconductor thin film formed of the composition is in amorphous phase at a temperature of 400°
C. or less.
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Abstract
Provided is a composition for an oxide semiconductor thin film and a field effect transistor (FET) using the composition. The composition includes from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx). The thin film formed of the composition remains in amorphous phase at a temperature of 400° C. or less. The FET includes an active layer formed of the composition and has improved electrical characteristics. The FET can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga.
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Citations
9 Claims
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1. A composition for an oxide semiconductor thin film, comprising:
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from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx); wherein said oxide semiconductor thin film formed of the composition is in amorphous phase at a temperature of 400°
C. or less. - View Dependent Claims (2)
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3. A field effect transistor (FET), comprising:
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source and drain electrodes; a gate insulator; an active layer; and a gate electrode disposed on a substrate, wherein the active layer is formed of an oxide containing; from about 50 to about 99 mol % of a zinc oxide (ZnO); from about 0.5 to 49.5 mol % of a tin oxide (SnOx); and remaining molar percentage of an aluminum oxide (AlOx), and is in amorphous phase at a temperature of 400°
C. or less, andwherein at least one of the source and drain electrodes and the gate electrode is formed with a transparent material that transmits visible light. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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Specification