Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip
First Claim
1. A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with each structural element comprising a semiconductor layer sequence, the method comprising the steps of:
- providing a chip composite base comprising a substrate and a growth surface;
forming on the growth surface a mask material layer with a multiplicity of windows, most of which have an average lateral extent of less than or equal to 1 μ
m, wherein a mask material is chosen so that a semiconductor material of the semiconductor layer sequence that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface, and wherein the windows of the mask material layer comprise a plurality of statistically distributed windows having varying forms and opening areas;
essentially simultaneously growing semiconductor layers to form the structural elements on regions of the growth surface that lie within the windows; and
singulating the chip composite base with applied material to form semiconductor chips each having a plurality of the structural elements;
wherein, after the growth of the semiconductor layers, a layer of electrically conductive contact material that is transmissive to an electromagnetic radiation emitted by an active zone is applied to the semiconductor layers, so that the semiconductor layers of a plurality of the structural elements are electrically conductively connected to one another by the contact material.
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Accused Products
Abstract
Presented is a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with at least one semiconductor layer. The method involves providing a chip composite base that includes a substrate and a growth surface. A mask material layer is formed on the growth surface. The mask material layer includes a multiplicity of windows having an average extent of less than or equal to 1 μm. A mask material is chosen so that a semiconductor material of the semiconductor layer that is to be grown essentially cannot grow on the mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. The chip composite base with applied material is singulated to form semiconductor chips.
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Citations
15 Claims
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1. A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with each structural element comprising a semiconductor layer sequence, the method comprising the steps of:
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providing a chip composite base comprising a substrate and a growth surface; forming on the growth surface a mask material layer with a multiplicity of windows, most of which have an average lateral extent of less than or equal to 1 μ
m, wherein a mask material is chosen so that a semiconductor material of the semiconductor layer sequence that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface, and wherein the windows of the mask material layer comprise a plurality of statistically distributed windows having varying forms and opening areas;essentially simultaneously growing semiconductor layers to form the structural elements on regions of the growth surface that lie within the windows; and singulating the chip composite base with applied material to form semiconductor chips each having a plurality of the structural elements; wherein, after the growth of the semiconductor layers, a layer of electrically conductive contact material that is transmissive to an electromagnetic radiation emitted by an active zone is applied to the semiconductor layers, so that the semiconductor layers of a plurality of the structural elements are electrically conductively connected to one another by the contact material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification