Semiconductor device and manufacturing method thereof
First Claim
Patent Images
1. A method for manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a glass substrate;
forming a gate insulating film over the semiconductor layer; and
forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma.
0 Assignments
0 Petitions
Accused Products
Abstract
The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.
-
Citations
13 Claims
-
1. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; and forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
-
-
2. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; and forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the source wiring includes a tapered portion.
-
-
3. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; and forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice.
-
-
4. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma; and electrically connecting the source wiring and the semiconductor layer.
-
-
5. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma, wherein the wiring includes a tapered portion; and electrically connecting the source wiring and the semiconductor layer.
-
-
6. A method for manufacturing a semiconductor device comprising:
-
forming a semiconductor layer over a glass substrate; forming a gate insulating film over the semiconductor layer; forming a source wiring over the gate insulating film by etching a conductive film in an inductively coupled plasma at least twice; and electrically connecting the source wiring and the semiconductor layer.
-
Specification