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Method of forming a structure over a semiconductor substrate

  • US 8,017,470 B2
  • Filed: 06/23/2010
  • Issued: 09/13/2011
  • Est. Priority Date: 06/22/2000
  • Status: Expired due to Fees
First Claim
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1. A method of forming a structure over a semiconductor substrate, the method comprising:

  • providing the semiconductor substrate, the substrate comprising a first region and a second region, the first region comprising a differently-doped region than the second region;

    forming a first oxide layer over the first and second regions;

    exposing the first oxide layer to an activated nitrogen species formed from plasma conditions to provide nitrogen into at least a portion of the first oxide layer over the first region;

    forming a first conductive layer over the first oxide layer and over the first and second regions;

    forming a second oxide layer over the first and second regions;

    forming a second conductive layer over the first and second regions; and

    removing the first conductive layer from over the second region before the forming of the second oxide layer and the second conductive layer.

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