Semiconductor device and method for forming the same
First Claim
1. A method for manufacturing a thin film semiconductor device:
- forming an island like semiconductor region on an insulator;
forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween;
forming an oxide layer on side and top surfaces of the gate electrode;
forming an insulator film over the oxide layer;
etching the insulator film to form side walls adjacent to the gate electrode with the oxide layer interposed therebetween;
forming a metal film over the side walls, the island like semiconductor region and the gate electrode;
forming at least one silicide region on a surface of the island like semiconductor by a heat treatment; and
annealing the silicide region by irradiating a light after removing unreacted portions of the metal film.
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Accused Products
Abstract
A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 μm or less in width, and allowing the metal to react with silicon.
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Citations
24 Claims
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1. A method for manufacturing a thin film semiconductor device:
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forming an island like semiconductor region on an insulator; forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween; forming an oxide layer on side and top surfaces of the gate electrode; forming an insulator film over the oxide layer; etching the insulator film to form side walls adjacent to the gate electrode with the oxide layer interposed therebetween; forming a metal film over the side walls, the island like semiconductor region and the gate electrode; forming at least one silicide region on a surface of the island like semiconductor by a heat treatment; and annealing the silicide region by irradiating a light after removing unreacted portions of the metal film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a thin film semiconductor device:
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forming an island like semiconductor region on an insulator; forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween; forming a metal film over the island like semiconductor region and the gate electrode; forming at least one silicide region on a surface of the island like semiconductor region by a heat treatment; annealing the silicide region by irradiating a light after removing unreacted portions of the metal film; and forming a conductive film comprising titan over the silicide region, wherein the conductive film is in contact with at least one of the silicide region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a thin film semiconductor device:
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forming an island like semiconductor region on an insulator; forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween; forming a metal film over the island like semiconductor region and the gate electrode; forming at least one silicide region on a surface of the island like semiconductor region by a heat treatment; removing unreacted portions of the metal film; annealing the silicide region by irradiating a light; and forming contacts comprising titan to silicide region. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for manufacturing a thin film semiconductor device:
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forming an island like semiconductor region on an insulator; forming a gate electrode on the island like semiconductor region with a gate insulator film interposed therebetween; forming side walls adjacent to the gate electrode, wherein an oxide layer is located between each of the side walls and the gate electrode; forming a metal film over the island like semiconductor region and the gate electrode; forming at least one silicide region on a surface of the island like semiconductor region by a first heat treatment; removing unreacted portions of the metal film; and conducting a second heat treatment; wherein the second heat treatment is conducted at a higher temperature than the first heat treatment. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification