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Semiconductor device and method of forming compliant polymer layer between UBM and conformal dielectric layer/RDL for stress relief

  • US 8,017,515 B2
  • Filed: 12/10/2008
  • Issued: 09/13/2011
  • Est. Priority Date: 12/10/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a substrate;

    forming a first conductive layer over a top surface of the substrate;

    forming a first insulating layer over the substrate;

    forming a first conformal dielectric layer over the first insulating layer;

    forming a second conductive layer over the first conductive layer and first conformal dielectric layer;

    forming a second conformal dielectric layer over the second conductive layer;

    depositing a compliant polymer material over the second conformal dielectric layer and second conductive layer;

    forming a third conductive layer over the compliant polymer material and second conductive layer, the third conductive layer being electrically connected to the second conductive layer; and

    forming a first solder bump over the third conductive layer.

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