Mechanically robust metal/low-κ interconnects
First Claim
1. A method for improving the adhesion strength between two different dielectric layers comprising:
- treating an upper surface region of a previously formed dielectric-containing substrate in the absence of a precursor used in forming the dielectric-containing substrate and at room temperature to form a treated surface layer only within the upper surface region of the dielectric-containing substrate that is physically and chemically different from a remaining portion of said dielectric-containing substrate that is not subjected to said treating; and
forming in a separate step from said treating a low-k dielectric layer having a dielectric constant of less than 4.0 on said treated surface layer.
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Abstract
A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.
22 Citations
15 Claims
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1. A method for improving the adhesion strength between two different dielectric layers comprising:
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treating an upper surface region of a previously formed dielectric-containing substrate in the absence of a precursor used in forming the dielectric-containing substrate and at room temperature to form a treated surface layer only within the upper surface region of the dielectric-containing substrate that is physically and chemically different from a remaining portion of said dielectric-containing substrate that is not subjected to said treating; and forming in a separate step from said treating a low-k dielectric layer having a dielectric constant of less than 4.0 on said treated surface layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming an interconnect structure comprising:
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providing an interconnect level having at least one conductive feature embedded within a dielectric material; forming a dielectric capping layer on an upper surface of said interconnect level; treating an upper surface region of the previously formed dielectric capping layer in the absence of a precursor used in forming the dielectric capping layer and at room temperature to form a treated surface layer only within the upper surface region of dielectric capping layer that is physically and chemically different from a remaining portion of said dielectric capping layer that is not subjected to said treating; and forming in a separate step from said treating a low-k dielectric layer having a dielectric constant of less than 4.0 on said treated surface layer. - View Dependent Claims (12, 13, 14, 15)
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Specification