Light emitting diode with a dielectric mirror having a lateral configuration
First Claim
Patent Images
1. A light emitting diode comprising:
- an active structure;
a first ohmic contact on said active structure;
a transparent conductive oxide layer on said active structure opposite said first ohmic contact, said transparent conductive oxide layer having a larger footprint than said active structure;
a dielectric mirror on said transparent conductive oxide layer opposite said active structure; and
a second contact, said second contact being positioned on said transparent conductive oxide layer opposite said dielectric mirror and separated from said active structure.
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Abstract
A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
56 Citations
33 Claims
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1. A light emitting diode comprising:
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an active structure; a first ohmic contact on said active structure; a transparent conductive oxide layer on said active structure opposite said first ohmic contact, said transparent conductive oxide layer having a larger footprint than said active structure; a dielectric mirror on said transparent conductive oxide layer opposite said active structure; and a second contact, said second contact being positioned on said transparent conductive oxide layer opposite said dielectric mirror and separated from said active structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light emitting diode comprising:
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a first Group III nitride epitaxial layer having a first conductivity type; a second Group III nitride epitaxial layer adjacent said first Group III nitride epitaxial layer and having the opposite conductivity type from said first Group III nitride epitaxial layer for forming a p-n junction with said first Group III nitride epitaxial layer; a transparent conductive oxide layer for providing current across the p-n junction formed by said Group III nitride epitaxial layers, said transparent conductive oxide layer being adjacent said second Group III nitride epitaxial layer and opposite from said first Group III nitride epitaxial layer; a dielectric mirror for increasing the external quantum efficiency of said light emitting diode, said dielectric mirror being adjacent said transparent conductive oxide layer and opposite from said Group III nitride epitaxial layers; an ohmic contact to said first Group III nitride epitaxial layer; and a contact to said transparent conductive oxide layer for providing current flow between said transparent conductive oxide layer and said ohmic contact and through said Group III nitride epitaxial layers to generate output. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification
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Current AssigneeCreeled Incorporated
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsDonofrio, Matthew, Ibbetson, James, Li, Ting, Edmond, John
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Primary Examiner(s)Tran; Tan N
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Application NumberUS12/329,722Publication NumberTime in Patent Office1,009 DaysField of Search257/95, 257/98, 257/99, 257/E21.09US Class Current257/98CPC Class CodesH01L 33/14 with a carrier transport co...H01L 33/145 with a current-blocking str...H01L 33/38 with a particular shapeH01L 33/42 Transparent materialsH01L 33/46 Reflective coating, e.g. di...
