Package for high power density devices

• US 8,018,056 B2
• Filed: 12/19/2006
• Issued: 09/13/2011
• Est. Priority Date: 12/21/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Hauenstein, Henning M.
• Primary Examiner(s): Clark; S. V
• Application Number:
  US11/641,270
• Publication Number:
  US 20070138651A1
• Time in Patent Office: 1,729 Days
• Field of Search: 257/681, 257/704, 257/730, 257/731, 257/728, 257/723, 257/724, 257/699
• US Class Current: 257/730
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/26175 Flow barriers
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32503 comprising an intermetallic compound
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73153 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83139 Guiding structures on the body
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/13 : characterised by the shape
• CPC Class Codes: H01L 23/15 : Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/36 : Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/552 : Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/62 : Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 28/20 : Resistors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/05432 : Al2O3
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.

Claims

1. A semiconductor device package comprising a semiconductor die having first and second flat parallel surfaces and electrodes on each of said surfaces and a support can for supporting said die;

said support can comprising a thin insulation body substantially comprising an insulator, said thin insulation body having top and bottom parallel surfaces and top and bottom conductive layers on said top and bottom surfaces respectively;

said top conductive layer having a depression therein defining a flat bottom web surface and an upstanding rim portion extending around at least a portion of the periphery said flat bottom web surface;

said die being disposed in said depression with said electrode on second surface mechanically and electrically fixed to said flat bottom web surface;

said first surface of said die being substantially coplanar with the top free surface-of said rim portion.

2. The package of claim 1, wherein said die is one of a silicon MOSgated device or IGBT and wherein said electrodes are source and drain electrodes respectively.

3. The package of claim 2, wherein said first electrode is a bump contact which extends beyond the plane of said rim.

4. The package of claim 2, wherein said first electrode is a solderable pad.

5. The package of claim 1, wherein said support can is a DBC wafer and wherein said insulation body is ceramic and wherein said top and bottom conductive layers are copper.

6. The package of claim 1, wherein said bottom contact is copper having a thickness of about 300 μ

m and said depression has a depth equal to the thickness of said die plus the thickness of said electrode on the bottom of said die.

7. The package of claim 5, wherein said insulation body is about 600 μ

m thick and said top and bottom contacts are each about 300 μ

m thick.

8. The package of claim 1, wherein said rim has a general U shape.

9. The package of claim 1, wherein said electrode on said second surface of said die is soldered to the surface of said depression.

10. The package of claim 3, wherein said support can is a DBC wafer and wherein said insulation body is ceramic and wherein said top and bottom contacts are copper.

11. The package of claim 3, wherein said bottom contact is copper having a thickness of about 300 μ

m and said depression has a depth equal to the thickness of said die plus the thickness of said electrode on the bottom of said die.

12. The package of claim 5, wherein said rim has a general U shape.

13. The package of claim 5, wherein said rim is open at its opposite ends.

14. The package of claim 5, wherein said electrode on said second surface of said die is soldered to the surface of said depression.

21. The package of claim 1, which further includes a heat sink body having a flat surface;

said conductive layer on said bottom surface of said support can being electrically and mechanically fixed to said flat surface of said heat sink.

22. The package of claim 21, which further includes fluid coolant channels in said heat sink.

23. The package of claim 21, wherein said die is a silicon MOSgated device and wherein said electrodes are source and drain electrodes respectively.

24. The package of claim 21, wherein said support can is a DBC wafer and wherein said insulation body is ceramic and wherein said top and bottom contacts are copper.

25. The package of claim 21, wherein said electrode on said second surface of said die is soldered to the surface of said depression.

26. The package of claim 21, which further includes at least one via in said insulation body, and a resistive shunt material in said via and electrically connected between said electrode said second surface and said bottom conductive layer.

27. The package of claim 21, which further includes a second package identical to said first package fixed to said flat surface of said heat sink and laterally spaced from the other package with said top and bottom electrodes of each of said packages spaced from one another.

28. The package of claim 27, wherein said insulation body for each of said packages is a continuous layer common to each of said bodies.

29. The package of claim 27, which further includes a common flat conductive heat sink fixed to and electrically connecting the tops of said top conductive layers of each of said packages.

30. The package of claim 28, which further includes a common flat conductive heat sink fixed to and electrically connecting the tops of said top conductive layers of each of said packages.

31. The package of claim 27, which further includes at least one via in said insulation body, and a resistive shunt material in said via electrically connected between said electrode said second surface and said bottom conductive layer.

32. The package of claim 31, wherein said insulation body for each of said packages is a continuous layer common to each of said bodies.

33. The package of claim 31, which further includes a common flat conductive heat sink fixed to and electrically connecting the tops of said top conductive layers of each of said packages.

34. The device of claim 1, which further includes an integrated circuit device having at least one terminal connected to said electrode on said top surface of said die.

35. The device of claim 14, which further includes an integrated circuit device having at least one terminal connected to said electrode on said top surface of said die.

36. The device of claim 1, which further includes an integrated circuit device having at least one terminal connected to said electrode on said top surface of said die.

38. The device of claim 21, which further includes an integrated circuit device having at least one terminal connected to said electrode on said top surface of said die.

39. The device of claim 27, which further includes an integrated circuit device mounted atop one of said packages and having one terminal connected to said top electrode of said one of said packages.

40. The device of claim 36, which further includes an integrated circuit device mounted atop one of said packages and having one terminal connected to said top electrode of said one of said packages.

15. A semiconductor package comprising a semiconductor die having first and second flat parallel surfaces and electrodes on each of said surfaces and a support for said die;

said support comprising an insulation body having top and bottom flat parallel surfaces and top and bottom conductive layers on said top and bottom surfaces and top and bottom conductive layers on said top and bottom surfaces respectively;

said die being mounted on said top conductive layer and being electrically connected thereto;

at least one via in said insulation body, and a resistive shunt material in said via and electrically connected between said electrode on said surface of said die connected to said top conductive layer and said bottom conductive layer.

16. The package of claim 15, wherein said die is a silicon MOSgated device and wherein said electrodes are source and drain electrodes respectively.

17. The package of claim 15, wherein said support can is a DBC wafer and wherein said insulation body is ceramic and wherein said top and bottom contacts are copper.

18. The package of claim 16, wherein said support can is a DBC wafer and wherein said insulation body is ceramic and wherein said top and bottom contacts are copper.

19. The package of claim 15, wherein said insulation body is about 600 μ

m thick and said top and bottom contacts are each about 300 μ

m thick.

20. The package of claim 15, wherein said electrode on said second surface of said die is soldered to said top conductive layer.

37. The device of claim 15, which further includes an integrated circuit device having at least one terminal connected to said electrode on said top surface of said die.