Protection layers for media protection during fabrication of probe memory device

• US 8,018,821 B2
• Filed: 09/30/2008
• Issued: 09/13/2011
• Est. Priority Date: 09/30/2008
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Heck, John
• Primary Examiner(s): Feild; Joseph H
• Assistant Examiner(s): Lee; Nicholas
• Application Number:
  US12/242,769
• Publication Number:
  US 20100127727A1
• Time in Patent Office: 1,078 Days
• Field of Search: 369/126, 365/151, 250309-311
• US Class Current: 369/126
• CPC Class Codes: G11B 9/02 using ferroelectric record carriers; Record carriers therefor
• CPC Class Codes: G11B 9/1436 with provision for moving the heads or record carriers relatively to each other
• CPC Class Codes: G11B 9/149 characterised by the memorising material or structure
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor

Abstract

A micro-electro-mechanical system (MEMS) seek-scan probe (SSP) memory device utilizes a protective layer over the delicate media layer to protect the media during harsh processing steps that may otherwise damage the media layer. The protective layer may comprise a layer of germanium and a layer of silicon dioxide.

Claims

1. An apparatus, comprising:

a cantilever wafer having a plurality of cantilever probes for scanning a media layer;

a mover wafer comprising the media layer;

a bond ring connected to the cantilever wafer; and

a germanium layer and a silicon dioxide layer between the bond ring and the mover wafer.

2. The apparatus as recited in claim 1 wherein the media layer comprises a dielectric material.

3. The apparatus as recited in claim 2 wherein the dielectric material comprises Lead Zirconate Titanate (PZT).

4. The apparatus as recited in claim 2 wherein the germanium layer and the silicon dioxide comprise a layer to protect the media layer and remain after manufacturing.

5. The apparatus as recited in claim 1 further comprising:

a cap wafer to cover the mover wafer.

6. The apparatus as recited in claim 5, further comprising:

mover circuitry and sense circuitry on the mover wafer on a side opposite the media layer.

7. The apparatus as recited in claim 1, wherein the apparatus comprises a seek-scan probe (SSP) memory device.

8. A method, comprising:

depositing a media layer on a mover wafer;

depositing a germanium layer and a silicon dioxide layer over the media layer to protect the media layer during further processing;

processing the mover wafer to form a mover;

attaching a cantilever wafer to one side of the mover wafer with bond rings; and

removing the germanium layer and a silicon dioxide layer from the media layer on the mover.

9. The method as recited in claim 8, wherein the media layer comprises a dielectric material.

10. The method as recited in claim 9, wherein the dielectric material comprises Lead Zirconate Titanate (PZT).

11. The method as recited in claim 8, wherein the mover is formed with a wafer support.

12. The method as recited in claim 8, wherein the germanium layer is deposited by evaporation.

13. The method as recited in claim 8, wherein the germanium layer is deposited by sputtering.

14. The method as recited in claim 8, wherein the germanium layer is deposited by chemical vapor deposition.

15. The method as recited in claim 8 where the germanium is removed with hydrogen peroxide.

16. The method as recited in claim 8 wherein the germanium is removed by hydrogen peroxide saturated with one of ozone or dissolved oxygen.

17. A seek-scan probe memory device, comprising:

a cantilever wafer having a plurality of cantilever probes for scanning a media layer;

a mover wafer comprising the media layer;

circuitry formed on the mover wafer;

a bond ring connected to the cantilever wafer; and

a germanium layer and a silicon dioxide layer between the bond ring and the over wafer remaining after the manufacturing process.

18. The seek-scan probe memory device as recited in claim 17, wherein the media layer comprises a dielectric material.

19. The seek-scan probe memory device as recited in claim 17, wherein the dielectric material comprises Lead Zirconate Titanate (PZT).