Light emitting device and method of manufacturing the same
First Claim
1. A method of manufacturing a light emitting device comprising:
- forming a first electrode which is a laminate of metal layers and is electrically connected to a thin film transistor over a substrate having an insulating surface;
forming an insulator to cover an edge portion of the first electrode;
thinning the first electrode so that the first electrode has a depression having a sloped surface by etching using the insulator as a mask;
forming a layer containing an organic compound on and in direct contact with the sloped surface; and
forming a second electrode on the layer containing the organic compound.
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Accused Products
Abstract
All lights generated in an organic compound layer are not taken out towards a TFT from a cathode as a transparent electrode. For instance, the light is emitted in a lateral direction (direction parallel to the substrate surface) but the light emitted in the lateral direction is not taken out resultantly, which leads to a loss. Therefore, a light emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
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Citations
30 Claims
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1. A method of manufacturing a light emitting device comprising:
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forming a first electrode which is a laminate of metal layers and is electrically connected to a thin film transistor over a substrate having an insulating surface; forming an insulator to cover an edge portion of the first electrode; thinning the first electrode so that the first electrode has a depression having a sloped surface by etching using the insulator as a mask; forming a layer containing an organic compound on and in direct contact with the sloped surface; and forming a second electrode on the layer containing the organic compound. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a light emitting device comprising:
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forming a first electrode which is a laminate of metal layers and is electrically connected to a thin film transistor over a substrate having an insulating surface; forming an insulator to cover an edge portion of the first electrode; thinning the first electrode so that the first electrode has depression having a sloped surface by etching using the insulator as a mask, and so that a number of layers of the laminate of metal layers in the depression is smaller than the number of layers of the laminate of metal layers outside the depression; forming a layer containing an organic compound on and in direct contact with the sloped surface; and forming a second electrode on the layer containing the organic compound. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a light emitting device comprising:
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forming a first electrode which is a laminate of metal layers and is electrically connected to a thin film transistor over a substrate having an insulating surface; forming an insulator to cover an edge portion of the first electrode; thinning the first electrode so that the first electrode has a depression having a sloped surface by etching using the insulator as a mask; forming a layer containing an organic compound on and in direct contact with the sloped surface; forming a second electrode on the layer containing the organic compound; and raising a work function of the first electrode or the second electrode. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of manufacturing a light emitting device comprising:
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forming a first electrode which is a laminate of metal layers and is electrically connected to a thin film transistor over a substrate having an insulating surface; forming an insulator to cover an edge portion of the first electrode; thinning the first electrode so that the first electrode has depression having a sloped surface by etching using the insulator as a mask, and so that a number of layers of the laminate of metal layers in the depression is smaller than the number of layers of the laminate of metal layers outside the depression; forming a layer containing an organic compound on and in direct contact with the sloped surface; forming a second electrode on the layer containing the organic compound; and raising a work function of the first electrode or the second electrode. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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Specification