Semiconductor device and method for manufacturing the semiconductor device
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer over a substrate;
forming a gate insulating layer over the gate electrode layer;
forming a source electrode layer and a drain electrode layer over the gate insulating layer;
performing a plasma treatment on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate in a chamber into which an inert gas is introduced; and
forming an oxide semiconductor layer over the gate insulating layer, the source electrode layer, and the drain electrode layer after the plasma treatment is performed,wherein the plasma treatment is performed in such a manner that the substrate is provided on one electrode of a pair of electrodes provided in the chamber and a bias voltage is applied to the substrate.
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Accused Products
Abstract
An object is to suppress deterioration of element characteristics even when an oxide semiconductor is formed after a gate insulating layer, a source electrode layer, and a drain electrode layer are formed. A gate electrode layer is formed over a substrate. A gate insulating layer is formed over the gate electrode layer. A source electrode layer and a drain electrode layer are formed over the gate insulating layer. Surface treatment is performed on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate. After the surface treatment is performed, an oxide semiconductor layer is formed over the gate insulating layer, the source electrode layer, and the drain electrode layer.
127 Citations
17 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming a source electrode layer and a drain electrode layer over the gate insulating layer; performing a plasma treatment on surfaces of the gate insulating layer, the source electrode layer, and the drain electrode layer which are formed over the substrate in a chamber into which an inert gas is introduced; and forming an oxide semiconductor layer over the gate insulating layer, the source electrode layer, and the drain electrode layer after the plasma treatment is performed, wherein the plasma treatment is performed in such a manner that the substrate is provided on one electrode of a pair of electrodes provided in the chamber and a bias voltage is applied to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming a conductive layer over the gate insulating layer; forming a first oxide semiconductor layer over the conductive layer; forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer; performing a plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack which are formed over the substrate in a chamber into which an inert gas is introduced; and forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the plasma treatment is performed, wherein the plasma treatment is performed in such a manner that the substrate is provided on one electrode of a pair of electrodes provided in the chamber and a bias voltage is applied to the substrate. - View Dependent Claims (12, 14, 16, 17)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; forming a conductive layer over the gate insulating layer; performing a first plasma treatment on a surface of the conductive layer; forming a first oxide semiconductor layer over the conductive layer after the first plasma treatment is performed; forming a first stack in which the conductive layer and the first oxide semiconductor layer are stacked and a second stack in which the conductive layer and the first oxide semiconductor layer are stacked by etching the conductive layer and the first oxide semiconductor layer; performing a second plasma treatment on surfaces of the gate insulating layer, the first stack, and the second stack; and forming a second oxide semiconductor layer over the gate insulating layer, the first stack, and the second stack after the second plasma treatment is performed, wherein the first plasma treatment and the second plasma treatment are performed in such a manner that the substrate is provided on one electrode of a pair of electrodes provided in a chamber and an inert gas is introduced into the chamber so that a bias voltage is applied to the substrate. - View Dependent Claims (13, 15)
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Specification